Datasheet > 1N914ATR

1N914ATR

更新时间： 2022-06-24 15:43:16

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Small Signal Diode

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1N914ATR 数据手册

1N91x, 1N4x48, FDLL914, FDLL4x48

ABSOLUTE MAXIMUM RATINGS (Values are at T = 25°C unless otherwise noted) (Note 1)

Rating

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

DC Forward Current

Symbol

Value

100

Unit

RRM

200

300

Recurrent Peak Forward Current

400

Non−repetitive Peak Forward Surge Current

Pulse Width = 1.0 s

1.0

FSM

Pulse Width = 1.0 ms

4.0

Storage Temperature Range

−65 to +200

−55 to +175

°C

STG

Operating Junction Temperature Range

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. These ratings are limiting values above which the serviceability of the diode may be impaired.

THERMAL CHARACTERISTICS

Parameter

Symbol

Max

500

300

Unit

°C

Power Dissipation

Thermal Resistance, Junction−to−Ambient

ELECTRICAL CHARACTERISTICS (Values are at T = 25°C unless otherwise noted) (Note 2)

Symbol

Parameter

Breakdown Voltage

Conditions

Min

100

Max

Unit

= 100 mA

= 5.0 mA

Forward Voltage

914B / 4448

916B

I = 5.0 mA

0.62

0.63

0.72

0.73

1.0

I = 5.0 mA

914 / 916 / 4148

914A / 916A

916B

I = 10 mA

I = 20 mA

1.0

I = 20 mA

1.0

914B / 4448

I = 100 mA

1.0

Reverse Leakage

Total Capacitance

= 20 V

0.025

= 20 V, T = 150°C

= 75 V

5.0

916/916A/916B/4448

914/914A/914B/4148

= 0, f = 1.0 MHz

2.0

4.0

Reverse Recovery Time

I = 10 mA, V = 6.0 V (600 mA)

4.0

= 1.0 mA, R = 100 W

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Non−recurrent square wave P = 8.3 ms.

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