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1N914B PDF预览

1N914B

更新时间: 2024-02-13 21:02:52
品牌 Logo 应用领域
威伦 - WILLAS 信号二极管
页数 文件大小 规格书
2页 335K
描述
1N914B SIGNAL DIODE

1N914B 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.59外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.25 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向电流:0.025 µA最大反向恢复时间:0.004 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N914B 数据手册

 浏览型号1N914B的Datasheet PDF文件第2页 
1N914B  
WILLAS  
1N914B SIGNAL DIODE  
Pb Free Product  
Absolute Maximum Ratings (Ta=25 C)  
°
)
Dimensions (DO-35  
Items  
Symbol  
VR  
Ratings Unit  
Reverse Voltage  
Reverse Recovery  
Time  
75  
4
V
ns  
.022(0.55)  
.018(0.45)  
trr  
1.02(26.0)  
MIN.  
Power Dissipation  
P
500  
mW  
3.33mW/ C (25 C)  
°
°
Forward Current  
Junction Temp.  
Storage Temp.  
IF  
Tj  
300  
-65 to 175  
mA  
C
C
°
°
.153(3.6)  
.132(3.0)  
Tstg -65 to 175  
.087(2.2)  
.067(1.7)  
Mechanical Data  
1.02(26.0)  
MIN.  
Items  
Package  
Case  
Lead/Finish  
Chip  
Materials  
DO-35  
Hermetically sealed glass  
Double stud/Solder Plating  
Glass Passivated  
Unit: inch (mm)  
Electrical Characteristics (Ta=25 C)  
°
Ratings  
Minimum Breakdown Voltage  
IR= 5.0uA  
Symbol  
BV  
Ratings  
Unit  
V
75  
100  
0.5  
IR= 100uA  
Peak Forward Surge Current PW= 1sec.  
Maximum Forward Voltage  
IF= 100mA  
IFsurge  
VF  
A
V
1.0  
Maximum Reverse Current  
VR= 20V  
VR= 75V  
IR  
uA  
0.025  
5.0  
VR= 20V, Tj= 150 C  
50  
°
Maximum Junction Capacitance  
VR= 0, f= 1 MHz  
Maximum Reverse Recovery Time  
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100  
Cj  
trr  
pF  
ns  
4
4
WILLAS ELECTRONIC CORP.  

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