5秒后页面跳转
1N914B PDF预览

1N914B

更新时间: 2024-02-09 17:54:44
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
2页 64K
描述
FAST SWITCHING DIODE

1N914B 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.59外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最大输出电流:0.2 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.25 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向电流:0.025 µA最大反向恢复时间:0.004 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

1N914B 数据手册

 浏览型号1N914B的Datasheet PDF文件第2页 
1N914 / 1N914A / 1N914B  
FAST SWITCHING  
DIODE  
Features  
·
·
·
·
Fast Switching Speed  
High Reliability  
High Conductance  
For General Purpose Switching Applications  
A
B
A
C
D
Mechanical Data  
DO-35  
Dim  
A
Min  
25.40  
¾
Max  
¾
·
·
Case: DO-35, Glass  
Terminals: Solderable per MIL-STD-202,  
Method 208  
B
4.00  
0.60  
2.00  
·
·
Marking: Type Number  
Weight: 0.013 grams (approx.)  
¾
C
D
¾
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRM  
Non-Repetitive Peak Reverse Voltage  
100  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
75  
V
VR(RMS)  
RMS Reverse Voltage  
53  
V
Forward Continuous Current  
(Note 1)  
1N914  
1N914A/B  
150  
300  
IFM  
mA  
Average Rectified Output Current  
(Note 1)  
1N914  
75  
IO  
IFSM  
Pd  
mA  
A
1N914A/B  
200  
Non-Repetitive Peak Forward Surge Current @ t = 1.0s  
1N914 @ t = 1.0ms  
1.0  
1.0  
4.0  
1N914A/B @ t = 1.0ms  
Power Dissipation (Note 1)  
500  
1.68  
mW  
mW/°C  
Derate Above 25°C  
RqJA  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range  
300  
K/W  
Tj , TSTG  
-65 to +175  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
IF = 5.0mA  
Maximum Forward Voltage  
1N914B  
1N914B  
1N914  
0.62  
¾
¾
0.72  
1.0  
1.0  
1.0  
IF = 100mA  
IF = 10mA  
IF = 20mA  
VFM  
V
1N914A  
¾
VR = 75V  
5.0  
50  
25  
mA  
mA  
nA  
IRM  
Maximum Peak Reverse Current  
V
V
R = 20V, Tj = 150°C  
¾
R = 20V  
VR = 0, f = 1.0MHz  
Cj  
trr  
Capacitance  
¾
¾
4.0  
4.0  
pF  
ns  
IF = 10mA to IR =1.0mA  
VR = 6.0V, RL = 100W  
Reverse Recovery Time  
Notes: 1. Valid provided that lead are kept at ambient temperature at a distance of 8.0mm.  
DS22001 Rev. E-4  
1 of 2  
1N914 / 1N914A / 1N914B  

与1N914B相关器件

型号 品牌 描述 获取价格 数据表
1N914-B ETC Complementary Switching Diode Chips

获取价格

1N914B.T26R FAIRCHILD Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35

获取价格

1N914B.T50A FAIRCHILD Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35

获取价格

1N914B_T50A FAIRCHILD Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, LEAD FREE PACKAGE-2

获取价格

1N914B-13 DIODES Rectifier Diode, 1 Element, 0.2A, 75V V(RRM), Silicon, DO-35

获取价格

1N914BA0 TSC 500mW High Speed Switching Diode

获取价格