Datasheet > 1N827AURE3

1N827AURE3

更新时间： 2024-11-09 19:37:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		测试二极管
页数	文件大小	规格书
3页	131K
描述
Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-213AA, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

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1N827AURE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-213AA
包装说明：	O-LELF-R2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.26
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	ZENER DIODE
最大动态阻抗：	10 Ω	JEDEC-95代码：	DO-213AA
JESD-30 代码：	O-LELF-R2	JESD-609代码：	e3
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	封装主体材料：	GLASS
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	260	最大功率耗散：	0.5 W
认证状态：	Not Qualified	标称参考电压：	6.2 V
子类别：	Voltage Reference Diodes	表面贴装：	YES
技术：	ZENER	端子面层：	MATTE TIN
端子形式：	WRAP AROUND	端子位置：	END
处于峰值回流温度下的最长时间：	40	电压温度Coeff-Max：	0.062 mV/ °C
最大电压容差：	4.84%	工作测试电流：	7.5 mA
Base Number Matches：	1

1N827AURE3 数据手册

1N821UR thru 1N829AUR-1, e3

(or MLL821 thru MLL829-1, e3)

6.2 & 6.55 Volt Temperature Compensated

Surface Mount Zener Reference Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The 1N821UR thru 1N829AUR-1 series of surface mount Zero-TC

Reference Diodes provides a selection of both 6.2 V and 6.55 V nominal

voltages and temperature coefficients to as low as 0.0005%/^oC for minimal

voltage change with temperature when operated at 7.5 mA. These glass

surface mount DO-213AA (MELF) reference diodes are optionally available

with an internal-metallurgical-bond by adding a “-1” suffix as well as RoHS

Compliant with an e3 suffix. This type of bonded Zener package

construction is also available in JAN, JANTX, and JANTXV military

qualifications (RoHS Compliant option not applicable). Microsemi also

offers numerous other Zener Reference Diode products for a variety of

DO-213AA

other voltages up to 200 V.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

• Surface mount equivalent of JEDEC registered

• Provides minimal voltage changes over a broad

1N821 thru 1N829 series

temperature range

• Internal metallurgical bond option available by adding

• For instrumentation and other circuit designs

a “-1” suffix

requiring a stable voltage reference

• Reference voltage selection of 6.2 V & 6.55 V +/-5%

• Maximum temperature coefficient selections available

with further tight tolerance options at lower voltage

from 0.01%/ºC to 0.0005%/ºC

• 1N821, 823, 825, 827 and 829 also have surface

mount qualification to MIL-PRF-19500/159 by adding

the JAN, JANTX, or JANTXV prefixes to part

numbers a well as the “-1” suffix; e.g. JANTX1N829-

1, etc.

• Tight reference voltage tolerances available with

center nominal value of 6.15 V by adding designated

tolerance such as 1%, 2%, 3%, etc. after the part

number for identification

e.g. 1N827UR-2%, 1N829AUR-1-1%, etc.

• RoHS Compliant devices available by adding an e3

•

Small surface-mount footprint

suffix (not applicable to military)

• Nonsensitive to ESD per MIL-STD-750 Method 1020

• Typical low capacitance of 100 pF or less

• Axial-leaded equivalents also available in DO-35 or

DO-7 without the UR suffix (see separate data sheet)

including military qualifications up to JANS for DO-7

(see separate data sheet)

• JANS equivalent available in DO-213AA via SCD

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating Temperatures: -65^oC to +175^oC

Storage Temperatures: -65^oC to +175^oC

•

CASE: Hermetically sealed glass case. DO-213AA

package

DC Power Dissipation: 500 mW @ T_L= 25^oC and

maximum current I_ZMof 70 mA. NOTE: For

optimum voltage-temperature stability, I_Z= 7.5 mA

(less than 50 mW in dissipated power)

TERMINALS: Leads, Tin-Lead (military) or RoHS

Compliant annealed matte Tin plating solderable

per MIL-STD-750, Method 2026

•

MARKING: Cathode band (except double anode

1N822 and 1N824)

•

Solder Temperatures: 260^oC for 10 s (max)

POLARITY: Reference diode to be operated with

the banded end positive with respect to the

opposite end

•

TAPE & REEL option: Standard per EIA-481-B with

12 mm tape, 2000 per 7 inch reel or 5000 oer 13

inch reel (add “TR” suffix to part number)

•

WEIGHT: 0.04 grams.

See package dimensions on last page

7-18-2005 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

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与1N827AURE3相关器件

型号	品牌	获取价格	描述	数据表
1N827AURE3/TR	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-213AA, ROHS COMPLIANT, HERMETIC SEALED, G
1N827AURTR	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes
1N827AURTR-1	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes
1N827AURTR-1-1	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
1N827AURTR-1-2	MICROSEMI	获取价格	6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
1N827AURTRE3	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-213AA, ROHS COMPLIANT, HERMETIC SEALED, G
1N827AV	STMICROELECTRONICS	获取价格	6.2V, SILICON, VOLTAGE REFERENCE DIODE
1N827DIE	MICROSEMI	获取价格	Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DIE
1N827RL	MOTOROLA	获取价格	6.2V, SILICON, VOLTAGE REFERENCE DIODE
1N827RL2	MOTOROLA	获取价格	Zener Diode, 6.2V V(Z), 5%, 0.4W, Silicon

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