1N827A

更新时间： 2024-11-30 22:37:43

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		二极管温度补偿
页数	文件大小	规格书
4页	41K
描述
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW

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1N827A 数据手册

MOTOROLA

SEMICONDUCTOR

TECHNICAL DATA

1N821,A 1N823,A

1N825,A 1N827,A

1N829,A

Temperature-Compensated

Zener Reference Diodes

Temperature-compensated zener reference diodes utilizing a single chip oxide passi-

vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed

structure.

TEMPERATURE-

COMPENSATED

SILICON ZENER

REFERENCE DIODES

6.2 V, 400 mW

Mechanical Characteristics:

CASE: Hermetically sealed, all-glass

DIMENSIONS: See outline drawing.

FINISH: All external surfaces are corrosion resistant and leads are readily solderable.

POLARITY: Cathode indicated by polarity band.

WEIGHT: 0.2 Gram (approx.)

MOUNTING POSITION: Any

Maximum Ratings

Junction Temperature: – 55 to +175°C

Storage Temperature: – 65 to +175°C

DC Power Dissipation: 400 mW @ T = 50°C

WAFER FAB LOCATION: Phoenix, Arizona

CASE 299

DO-204AH

GLASS

ASSEMBLY/TEST LOCATION: Phoenix, Arizona

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted. V = 6.2 V ± 5%* @ I = 7.5 mA) (Note 5)

Temperature

Coefficient

For Reference Only

%/°C

Maximum

Voltage Change

Ambient

Test Temperature

Maximum

Dynamic Impedance

JEDEC

Type No.

∆V (Volts)

°C

±1°C

Ohms

(Note 1)

(Note 2)

1N821

0.096

– 55, 0, +25, +75, +100

0.01

0.005

0.002

0.001

0.0005

0.01

1N823

0.048

1N825

0.019

0.009

0.005

0.096

0.048

0.019

0.009

0.005

1N827

1N829

1N821A

1N823A

1N825A

1N827A

1N829A

0.005

0.002

0.001

0.0005

*Tighter-tolerance units available on special request.

Motorola TVS/Zener Device Data

6.2 Volt OTC 400 mW DO-35 Data Sheet

8-159

12 3 4

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