生命周期: | Obsolete | 包装说明: | O-LALF-W2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.62 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | ZENER DIODE | JESD-30 代码: | O-LALF-W2 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 最低工作温度: | -55 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 最大功率耗散: | 0.4 W |
认证状态: | Not Qualified | 标称参考电压: | 6.2 V |
表面贴装: | NO | 技术: | ZENER |
端子形式: | WIRE | 端子位置: | AXIAL |
电压温度Coeff-Max: | 0.062 mV/ °C | 最大电压容差: | 5% |
工作测试电流: | 7.5 mA | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N827AT/R | NXP |
获取价格 |
DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Vo | |
1N827ATA2 | MOTOROLA |
获取价格 |
6.2V, SILICON, VOLTAGE REFERENCE DIODE | |
1N827ATR | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | |
1N827ATR-1 | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | |
1N827ATR-1-1 | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | |
1N827ATR-1-2 | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | |
1N827ATR-2 | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | |
1N827AUR | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes | |
1N827AUR-1 | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes | |
1N827AUR-1%TR | MICROSEMI |
获取价格 |
6.2V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2 |