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1N821A-1-PBF PDF预览

1N821A-1-PBF

更新时间： 2024-11-14 05:37:39
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DIGITRON /
页数 文件大小 规格书
2页 235K
描述
Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-7

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1N821A-1-PBF 数据手册

 浏览型号1N821A-1-PBF的Datasheet PDF文件第2页 
1N821-1N829A  
TEMPERATURE COMPENSATED ZENER  
REFERENCE DIODE  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Operating and storage temperature range  
-65°C to +175°C  
500mW @ TL = 25°C and maximum current lZM OF 70mA.  
For optimum voltage-temperature stability, lZ = 7.5mA  
(less than 50 mW in dissipated power)  
DC power dissipation  
Solder temperatures  
260°C for 10 s (max)  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Voltage temperature  
stability  
(ΔVZT MAX)  
-55°C to = 100°C  
(Note 3 and 4)  
Maximum  
reverse  
current  
lR @ 3V  
Effective  
temperature  
coefficient  
αVZ  
Maximum zener  
impedance  
(Note 2)  
Zener Test  
Current  
lZT  
Part number  
Zener voltage  
(Note 1 and 4)  
VZ @ lZT  
ZZT @ lZT  
VOLTS  
5.9-6.5  
5.9-6.5  
5.9-6.5  
5.9-6.5  
5.9-6.5  
5.9-6.5  
5.9-6.5  
5.9-6.5  
6.2-6.9  
5.9-6.5  
5.9-6.5  
6.2-6.9  
5.9-6.5  
5.9-6.5  
mA  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
OHMS  
15  
μA  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
mV  
96  
96  
96  
48  
48  
48  
19  
19  
20  
9
%/°C  
0.01  
1N821  
1N821A  
1N822†  
1N823  
10  
0.01  
15  
0.01  
15  
0.005  
0.005  
0.005  
0.002  
0.002  
0.002  
0.001  
0.001  
0.001  
0.0005  
0.0005  
1N823A  
1N824†  
1N825  
10  
15  
15  
1N825A  
1N826  
10  
15  
1N827  
15  
1N827A  
1N828  
10  
9
15  
10  
5
1N829  
15  
1N829A  
10  
5
† Double Anode; electrical specifications apply under both bias polarities.  
NOTES:  
1.  
2.  
3.  
Add a “-1” suffix for internal metallurgical bond.  
Zener impedance measured by superimposing 0.75 mA ac rms on 7.5mA dc @ 25°C.  
The maximum allowable change observed over the entire temperature range, i.e. the diode voltage will not exceed the specified mV change at  
discrete temperature between the established limits.  
4.  
Voltage measurements to be performed 15 seconds after application of dc current.  
Rev. 20160114  
12

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