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1N821ATR PDF预览

1N821ATR

更新时间： 2024-01-29 10:38:00
品牌 Logo 应用领域
美高森美 - MICROSEMI 温度补偿
页数 文件大小 规格书
3页 231K
描述
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated

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中文翻译

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1N821ATR 技术参数

生命周期：Obsolete包装说明：O-LALF-W2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.62
其他特性：TEMPERATURE COMPENSATED外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODEJESD-30 代码：O-LALF-W2
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM最大功率耗散：0.4 W
认证状态：Not Qualified标称参考电压：6.2 V
表面贴装：NO技术：ZENER
端子形式：WIRE端子位置：AXIAL
电压温度Coeff-Max：0.62 mV/ °C工作测试电流：7.5 mA
Base Number Matches：1

1N821ATR 数据手册

 浏览型号1N821ATR的Datasheet PDF文件第2页浏览型号1N821ATR的Datasheet PDF文件第3页 
1N821 thru 1N829A-1 DO-7  
6.2 & 6.55 Volt Temperature Compensated  
Zener Reference Diodes  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The popular 1N821 thru 1N829 series of Zero-TC Reference Diodes  
provides a selection of both 6.2 V and 6.55 V nominal voltages and  
temperature coefficients to as low as 0.0005%/oC for minimal voltage  
change with temperature when operated at 7.5 mA. These glass axial-  
leaded DO-7 reference diodes are also available in JAN, JANTX, JANTXV,  
and JANS military qualifications. Microsemi also offers numerous other  
Zener Reference Diode products for a variety of other voltages up to 200 V.  
DO-7  
(DO-204AA)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
JEDEC registered 1N821 thru 1N829 series  
Internal metallurgical bonds  
Double anode option with 1N822 and 1N824 selection  
•
•
•
•
Provides minimal voltage changes over a broad  
temperature range  
For instrumentation and other circuit designs  
requiring a stable voltage reference  
Reference voltage selection of 6.2 V & 6.55 V +/-5%  
Maximum temperature coefficient selections  
with further tight tolerance options at nominal of 6.35 V  
available from 0.01%/ºC to 0.0005%/ºC  
•
1N821, 823, 825, 827 and 829 also have military  
qualification to MIL-PRF-19500/159 up to the JANS  
level by adding JAN, JANTX, JANTXV, or JANS  
prefixes to part numbers as well as the “-1” suffix, e.g.  
JANTX1N829-1, etc.  
Radiation Hardened devices available by changing  
“1N” prefix to “RH”, e.g. RH827, RH 829, RH829A,  
etc. Also consult factory for “RH” data sheet brochure  
Military surface mount equivalents also available in  
DO-213AA with UR-1 suffix and JAN, JANTX, or  
JANTXV prefix, e.g. JANTX1N829UR-1 (see separate  
data sheet)  
Tight voltage tolerances with nominal reference  
voltages of 6.35 V available by adding tolerance  
1%, 2%, 3%, etc. after the part number for  
identification e.g. 1N827-2%, 1N829A -1%, 1N829-  
1-1%, etc.  
•
•
•
•
Flexible axial-lead mounting terminals  
Nonsensitive to ESD per MIL-STD-750 Method  
1020  
•
Also available in smaller axial-leaded DO-35 package  
(see separate data sheet)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Operating & StorageTemperature: -65oC to +175oC  
•
•
•
•
CASE: Hermetically sealed glass case with DO-7  
DC Power Dissipation: 500 mW @ TL = 25oC and  
maximum current IZM of 70 mA. NOTE: For optimum  
voltage-temperature stability, IZ = 7.5 mA (less than 50  
mW in dissipated power)  
(DO-204AA) package  
TERMINALS: Tin-lead plated and solderable per  
MIL-STD-750, Method 2026  
MARKING: Part number and cathode band (except  
•
Solder temperatures: 260 oC for 10 s (maximum)  
double anode 1N822 and 1N824)  
POLARITY: Reference diode to be operated with  
the banded end positive with respect to the  
opposite end  
•
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
•
•
WEIGHT: 0.2 grams.  
See package dimensions on last page  
Copyright 2003  
Microsemi  
Page 1  
10-27-2003 REV C  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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