Datasheet > 1N8163E3

1N8163E3

更新时间： 2023-02-26 14:20:33

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
6页	416K
描述
Trans Voltage Suppressor Diode

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中文翻译

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数据手册

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1N8163E3 数据手册

1N8149 – 1N8182

Voidless-Hermetically-Sealed Unidirectional 150 W

Low-Capacitance Transient Voltage Suppressors

Available

DESCRIPTION

This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor

(TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where

a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from

the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak

“standoff” voltage selection from 6.8 to 170 volts with 150 watt ratings. They are very robust in hard-

glass construction and also use an internal metallurgical bond identified as Category 1 for high reliability

applications. These devices are also available in axial leaded packages for thru-hole mounting.

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES



High surge current and peak pulse power unidirectional protection for sensitive circuits.

Very low capacitance for high frequency or high baud rate applications.



Bidirectional capability with two devices in anti-parallel (see Figure 5).

Triple-layer passivation.

“A” Package

Internal “Category 1” metallurgical bonds.

Voidless hermetically sealed glass package.

RoHS compliant versions are available.

Also available in:

“A” MELF package

(surface mount)

1N8149US – 1N8182US

APPLICATIONS / BENEFITS



High reliability transient protection.

Extremely robust construction.

Working peak “standoff” voltage (V_WM) from 6.8 to 170 volts.

Available as 150 W peak pulse power (P_PP) at 10/1000 µs.

Lowest available capacitance for 150 W rated TVS.

ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.

Secondary lightning protection per select levels in IEC61000-4-5.

Flexible axial-leaded mounting terminals.

Nonsensitive to ESD per MIL-STD-750 method 1020.

Inherently radiation hard as described in Microsemi MicroNote 050.

MAXIMUM RATINGS

MSC – Lawrence

6 Lake Street,

Parameters/Test Conditions

Symbol

T_Jand T_STG

Value

-55 to +175

Unit

^oC

Lawrence, MA 01841

1-800-446-1158

(978) 620-2600

Junction and Storage Temperature

Capacitance at zero volts

Thermal Resistance junction to ambient

Peak Pulse Power at 25 ^oC (10µs/1000µs)

Impulse repetition rate (duty factor)

Steady State (Average) Power @ T_A= 25 ^oC

Solder Temperature (10 s maximum)

R_θJA

150

^oC/W

Fax: (978) 689-0803

P_PP

150

MSC – Ireland

d.f

0.01

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

P_M(AV)

1.0

^oC

260

Note: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from

Website:

mounting point to ambient is sufficiently controlled where T_J(MAX)is not exceeded.

www.microsemi.com

T4-LDS-xxxx, Rev x (10-02-14)

Page 1 of 6

12 3 4 5 6

中文翻译

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与1N8163E3相关器件

型号	品牌	获取价格	描述	数据表
1N8165E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode
1N8166E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode
1N8167	MICROSEMI	获取价格	Trans Voltage Suppressor Diode
1N8168	MICROSEMI	获取价格	Trans Voltage Suppressor Diode
1N816BK	CENTRAL	获取价格	Stabistor Diode, 0.7V V(FM), Silicon, DO-35, DO-35, 2 PIN
1N816BKLEADFREE	CENTRAL	获取价格	Stabistor Diode, 0.7V V(FM), Silicon, DO-35, DO-35, 2 PIN
1N816LEADFREE	CENTRAL	获取价格	Stabistor Diode, 0.7V V(FM), Silicon, DO-35, DO-35, 2 PIN
1N816PBFREE	CENTRAL	获取价格	暂无描述
1N816TR	CENTRAL	获取价格	暂无描述
1N816TRLEADFREE	CENTRAL	获取价格	Stabistor Diode, 1V V(FM), Silicon, DO-35

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