1N6620

更新时间： 2024-01-31 13:14:48

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	343K
描述
RECOVERY GLASS RECTIFIERS

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技术参数
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1N6620 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	MELF
包装说明：	MELF-A, 2 PIN	针数：	2
Reach Compliance Code：	compliant	HTS代码：	8541.10.00.80
风险等级：	5.36	Is Samacsys：	N
其他特性：	METALLURGICAL BONDED	应用：	ULTRA FAST RECOVERY
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.6 V	JESD-30 代码：	E-LELF-R2
JESD-609代码：	e0	最大非重复峰值正向电流：	20 A
元件数量：	1	相数：	1
端子数量：	2	最高工作温度：	175 °C
最大输出电流：	1.2 A	封装主体材料：	GLASS
封装形状：	ELLIPTICAL	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
最大重复峰值反向电压：	200 V	最大反向恢复时间：	0.03 µs
子类别：	Rectifier Diodes	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	WRAP AROUND
端子位置：	END	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

1N6620 数据手册

1N6620US thru 1N6625US

S C O T T S D A L E D I V I S I O N

RECOVERY GLASS RECTIFIERS

DESCRIPTION

APPEARANCE

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-

19500/585 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working

peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-

glass construction using an internal “Category I” metallurgical bond. These devices

are also available in axial-leaded packages for thru-hole mounting (see separate

data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier

products to meet higher and lower current ratings with various recovery time speed

requirements including standard, fast and ultrafast device types in both through-hole

and surface mount packages.

Package “A”

or D-5A

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Surface mount series equivalent to the JEDEC

registered 1N6620 to 1N6625 series

•

Ultrafast recovery rectifier series 200 to 1000 V

Military and other high-reliability applications

Switching power supplies or other applications

requiring extremely fast switching & low forward

loss

High forward surge current capability

Low thermal resistance

•

Voidless hermetically sealed glass package

Extremely robust construction

Triple-layer passivation

•

Internal “Category I” Metallurgical bonds

JAN, JANTX, and JANTXV available per MIL-PRF-

19500/585

Controlled avalanche with peak reverse power

capability

•

Further options for screening in accordance with MIL-

PRF-19500 for JANS by using a “MSP” prefix, e.g.

MSP6620US, MSP6624US, etc.

•

Inherently radiation hard as described in Microsemi

MicroNote 050

Axial-leaded equivalents also available (see separate

data sheet for 1N6620 thru 1N6625)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Junction Temperature: -65^oC to +175^oC

• Storage Temperature: -65^oC to +175^oC

•

CASE: Hermetically sealed voidless hard glass

with Tungsten slugs

• Peak Forward Surge Current @ 25^oC: 20 Amps (except

TERMINATIONS: End caps are solid Silver (Ag)

with Tin/Lead (Sn/Pb) finish

1N6625 which is 15 Amps)

•

MARKING: Cathode band only

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-481-B

Weight: 193 mg

Note: Test pulse = 8.3 ms, half-sine wave.

• Average Rectified Forward Current (I_O) at T_EC=+110^oC:

1N6620 thru 1N6622: 2.0 Amps

1N6623 thru 1N6625: 1.5 Amps

(Derate linearly at 1.5%/^oC for T_EC> +110^oC)

• Average Rectified Forward Current (I_O) at T_A=25^oC:

1N6620 thru 1N6622: 1.2 Amps

See package dimensions and recommended pad

layout on last page

1N6623 thru 1N6625: 1.0 Amp

(Derate linearly at 0.67%/ ^oC for T_A>+25^oC. This I_O

rating is typical for PC boards where thermal resistance

from mounting point to ambient is sufficiently controlled

where T_J(max)is not exceeded.)

• Thermal Resistance junction to endcap (R_θJEC): 20^oC/W

• Capacitance at V_R= 10 V: 10 pF

• Solder temperature: 260^oC for 10 s (maximum)

6-19-2005 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

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1N6620 替代型号

型号	品牌	替代类型	描述	数据表
1N6620US	MICROSEMI	完全替代	RECOVERY GLASS RECTIFIERS

与1N6620相关器件

型号	品牌	获取价格	描述	数据表
1N6620_04	MICROSEMI	获取价格	VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS
1N6620-E3	MICROSEMI	获取价格	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.2A, 200V V(RRM), Silicon, HERMETIC SEALE
1N6620U	SENSITRON	获取价格	Ultrafast Recovery Rectifier
1N6620US	SENSITRON	获取价格	Ultrafast Recovery Rectifier
1N6620US	MICROSEMI	获取价格	RECOVERY GLASS RECTIFIERS
1N6620US_09	MICROSEMI	获取价格	VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST RECOVERY GLASS RECTIFIERS
1N6620V	SENSITRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon,
1N6621	MICROSEMI	获取价格	RECOVERY GLASS RECTIFIERS
1N6621	SEMTECH	获取价格	Axial Leaded Hermetically Sealed Ultra Fast Recovery Rectifier Diode
1N6621	SENSITRON	获取价格	Ultrafast Recovery Rectifier

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