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1N6375RL4G PDF预览

1N6375RL4G

更新时间: 2024-11-27 04:24:55
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管
页数 文件大小 规格书
8页 80K
描述
1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

1N6375RL4G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.68
Is Samacsys:N其他特性:EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE
最小击穿电压:11.7 V外壳连接:ISOLATED
最大钳位电压:16.7 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
最大重复峰值反向电压:10 V子类别:Transient Suppressors
表面贴装:NO技术:ZENER
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N6375RL4G 数据手册

 浏览型号1N6375RL4G的Datasheet PDF文件第2页浏览型号1N6375RL4G的Datasheet PDF文件第3页浏览型号1N6375RL4G的Datasheet PDF文件第4页浏览型号1N6375RL4G的Datasheet PDF文件第5页浏览型号1N6375RL4G的Datasheet PDF文件第6页浏览型号1N6375RL4G的Datasheet PDF文件第7页 
1N6373 − 1N6381 Series  
(ICTE−5 − ICTE−36,  
MPTE−5 − MPTE−45)  
1500 Watt Peak Power  
Mosorbt Zener Transient  
Voltage Suppressors  
http://onsemi.com  
Unidirectional*  
Cathode  
Anode  
Mosorb devices are designed to protect voltage sensitive  
components from high voltage, high−energy transients. They have  
excellent clamping capability, high surge capability, low zener  
impedance and fast response time. These devices are  
ON Semiconductor’s exclusive, cost-effective, highly reliable  
Surmetict axial leaded package and are ideally-suited for use in  
communication systems, numerical controls, process controls,  
medical equipment, business machines, power supplies and many  
other industrial/consumer applications, to protect CMOS, MOS and  
Bipolar integrated circuits.  
AXIAL LEAD  
CASE 41A  
PLASTIC  
MARKING DIAGRAMS  
A
MPTE  
−xx  
1N  
63xx  
YYWWG  
G
Specification Features  
Working Peak Reverse Voltage Range − 5.0 V to 45 V  
Peak Power − 1500 Watts @ 1 ms  
A
ICTE  
−xx  
ESD Rating of Class 3 (>16 KV) per Human Body Model  
Maximum Clamp Voltage @ Peak Pulse Current  
Low Leakage < 5 mA Above 10 V  
YYWWG  
G
A
= Assembly Location  
Response Time is Typically < 1 ns  
Pb−Free Packages are Available*  
MPTE−xx = ON Device Code  
1N63xx = JEDEC Device Code  
ICTE−xx = ON Device Code  
Mechanical Characteristics  
YY  
WW  
G
= Year  
= Work Week  
= Pb−Free Package  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
(Note: Microdot may be in either location)  
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:  
230°C, 1/16from the case for 10 seconds  
ORDERING INFORMATION  
POLARITY: Cathode indicated by polarity band  
MOUNTING POSITION: Any  
Device  
Package  
Shipping  
MPTE−xx, G  
Axial Lead  
(Pb−Free)  
500 Units/Box  
MPTE−xxRL4, G  
ICTE−xx, G  
Axial Lead 1500/Tape & Reel  
(Pb−Free)  
Axial Lead  
(Pb−Free)  
500 Units/Box  
ICTE−xxRL4, G  
Axial Lead 1500/Tape & Reel  
(Pb−Free)  
1N63xx, G  
Axial Lead  
(Pb−Free)  
500 Units/Box  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
1N63xxRL4, G  
Axial Lead 1500/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 4  
1N6373/D  

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