5秒后页面跳转
1N6376 PDF预览

1N6376

更新时间: 2024-11-29 07:23:07
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
6页 48K
描述
Zener Transient Voltage Suppressors Unidirectional and Bidirectional

1N6376 数据手册

 浏览型号1N6376的Datasheet PDF文件第2页浏览型号1N6376的Datasheet PDF文件第3页浏览型号1N6376的Datasheet PDF文件第4页浏览型号1N6376的Datasheet PDF文件第5页浏览型号1N6376的Datasheet PDF文件第6页 
MOTOROLA  
SEMICONDUCTOR  
TECHNICAL DATA  
1N6373A  
SERIES  
1500 WATT  
1500 Watt MOSORB  
GENERAL DATA APPLICABLE TO ALL SERIES IN  
THIS GROUP  
PEAK POWER  
Zener Transient Voltage Suppressors  
Unidirectional and Bidirectional  
MOSORB  
ZENER OVERVOLTAGE  
TRANSIENT  
SUPPRESSORS  
6.2–250 VOLTS  
1500 WATT PEAK POWER  
5 WATTS STEADY STATE  
Mosorb devices are designed to protect voltage sensitive components from high volt-  
age, high energy transients. They have excellent clamping capability, high surge capabili-  
ty, low zener impedance and fast response time. These devices are Motorola’s exclusive,  
cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use  
in communication systems, numerical controls, process controls, medical equipment,  
business machines, power supplies and many other industrial/consumer applications, to  
protect CMOS, MOS and Bipolar integrated circuits.  
Specification Features:  
Standard Voltage Range — 6.2 to 250 V  
Peak Power — 1500 Watts @ 1 ms  
Maximum Clamp Voltage @ Peak Pulse Current  
Low Leakage < 5 µA Above 10 V  
UL Recognition  
Response Time is Typically < 1 ns  
CASE 41A  
PLASTIC  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are readily solderable  
POLARITY: Cathode indicated by polarity band. When operated in zener mode, will be  
positive with respect to anode  
MOUNTING POSITION: Any  
WAFER FAB LOCATION: Phoenix, Arizona  
ASSEMBLY/TEST LOCATION: Guadalajara, Mexico  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Power Dissipation (1)  
P
PK  
1500  
Watts  
@ T 25°C  
L
Steady State Power Dissipation  
P
D
5
Watts  
@ T 75°C, Lead Length = 3/8″  
L
Derated above T = 75°C  
50  
mW/°C  
L
Forward Surge Current (2)  
I
200  
Amps  
FSM  
@ T = 25°C  
A
Operating and Storage Temperature Range  
T , T  
J stg  
– 65 to +175  
°C  
Lead temperature not less than 1/16from the case for 10 seconds: 230°C  
NOTES: 1. Nonrepetitive current pulse per Figure 5 and derated above T = 25°C per Figure 2.  
A
NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.  
Devices listed in bold, italic are Motorola preferred devices.  
Motorola TVS/Zener Device Data  
500 Watt Peak Power Data Sheet  
4-1  

与1N6376相关器件

型号 品牌 获取价格 描述 数据表
1N6376/100-E3 VISHAY

获取价格

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6376/51-E3 VISHAY

获取价格

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6376/54 VISHAY

获取价格

Trans Voltage Suppressor Diode, 12V V(RWM), Unidirectional,
1N6376/54-E3 VISHAY

获取价格

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6376/58 VISHAY

获取价格

Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, PLA
1N6376/58-E3 VISHAY

获取价格

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6376/62-E3 VISHAY

获取价格

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6376/72-E3 VISHAY

获取价格

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6376/74-E3 VISHAY

获取价格

DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6376/92 VISHAY

获取价格

Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, PLA