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1N6376E3 PDF预览

1N6376E3

更新时间: 2023-08-15 00:00:00
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
3页 174K
描述
Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN

1N6376E3 数据手册

 浏览型号1N6376E3的Datasheet PDF文件第2页浏览型号1N6376E3的Datasheet PDF文件第3页 
1N6373 thru 1N6389, e3  
or MPTE-5 thru MPTE-45C, e3  
1500 WATT LOW CLAMPING FACTOR  
TRANSIENT VOLTAGE SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This Transient Voltage Suppressor (TVS) series for 1N6373 thru 1N6389  
are JEDEC registered selections for both unidirectional and bidirectional  
devices. The 1N6373 thru 1N6381 are unidirectional and the 1N6382 thru  
1N6389 are bi-directional where they all provide a very low specified  
clamping factor for minimal clamping voltages (VC) above their respective  
breakdown voltages (VBR) as specified herein. They are most often used  
in protecting sensitive components from inductive switching transients or  
induced secondary lightning effects as found in lower surge levels of  
IEC61000-4-5 . They are also very successful in protecting airborne  
avionics and electrical systems. Since their response time is virtually  
CASE 1  
instantaneous, they can also protect from ESD and EFT per IEC61000-4-2  
and IEC61000-4-4.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Unidirectional and bidirectional TVS series for thru-hole  
mounting  
Designed to protect Bipolar and MOS  
Microprocessor based systems.  
Suppresses transients up to 1500 watts @ 10/1000 µs  
Protection from switching transients and induced RF  
ESD & EFT protection per IEC 61000-4-2 and -4-4  
t
clamping (0 volts to V(BR) min):  
Unidirectional – Less than 100 pico seconds.  
Bidirectional – Less than 5 nano seconds.  
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance:  
Working voltage (VWM) range 5 V to 45 V  
Class 1, 2 & 3 1N6356 to 1N6372  
Class 4: 1N6356 to 1N6362  
Low clamping factor (ratio of actual VC/VBR): 1.33 @ full  
rated power and 1.20 @ 50% rated power  
Secondary lightning protection per IEC61000-4-5  
Economical plastic encapsulated TVS for thru-hole mount  
with 12 Ohms source impedance:  
Options for screening in accordance with MIL-PRF-19500  
for JAN, JANTX, and JANTXV are also available by  
adding MQ, MX, or MV prefixes respectively to part  
numbers, e.g. MX1N6373, etc.  
Class 1 & 2: 1N6356 to 1N6372  
Class 3: 1N6356 to 1N6362  
Class 4: 1N6356 to 1N6358  
Secondary lightning protection per IEC61000-4-5  
Surface mount equivalent packages also available as  
SMCJ6373 – SMCJ6389 (consult factory for other  
surface mount options)  
with 2 Ohms source impedance:  
Class 2: 1N6356 to 1N6361  
Class 3: 1N6356 to 1N6358  
RoHS Compliant devices available by adding “e3” suffix  
Metal package axial-leaded equivalents available in the  
1N6373 – 1N6389 series (see separate data sheet)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
1500 Watts for 10/1000 μs with repetition rate of 0.01% or  
CASE: Void-free transfer molded thermosetting  
less* at lead temperature (TL) 25oC (See Figs. 1, 2, & 4)  
epoxy body meeting UL94V-0  
Operating & Storage Temperatures: -65o to +150oC  
FINISH: Tin-Lead or RoHS Compliant annealed-  
matte Tin plating solderable per MIL-STD-750  
method 2026  
Thermal Resistance: 22ºC/W junction to lead at 3/8 inch  
(10 mm) from body, or 82ºC/W junction to ambient when  
mounted on FR4 PC board with 4 mm2 copper pads (1oz)  
and track width 1 mm, length 25 mm  
POLARITY: Cathode indicated by band  
MARKING: Part number and polarity diode symbol  
WEIGHT: 1.5 grams. (Approx)  
Steady-State Power dissipation*: 5 watts at TL < 40oC, or  
1.52 watts at TA = 25ºC when mounted on FR4 PC board  
described for thermal resistance  
Solder Temperatures: 260 o C for 10 s (maximum)  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
See “CASE 1” package dimension on last page  
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage  
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).  
Copyright © 2008  
Microsemi  
Page 1  
10-09-2008 REVD  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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