5秒后页面跳转
捷配首页

Datasheet > 二极管 > 瞬态抑制器> 1N6375RL4
1N6375RL4 PDF预览

1N6375RL4

更新时间： 2024-01-11 17:39:59
品牌 Logo 应用领域
安森美 - ONSEMI 二极管局域网
页数 文件大小 规格书
8页 80K
描述
1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

阅读下载

获取价格

1N6375RL4 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：O-PALF-W2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.68
Is Samacsys：N其他特性：EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE
最小击穿电压：11.7 V外壳连接：ISOLATED
最大钳位电压：16.7 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
最大重复峰值反向电压：10 V子类别：Transient Suppressors
表面贴装：NO技术：ZENER
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

1N6375RL4 数据手册

 浏览型号1N6375RL4的Datasheet PDF文件第2页浏览型号1N6375RL4的Datasheet PDF文件第3页浏览型号1N6375RL4的Datasheet PDF文件第4页浏览型号1N6375RL4的Datasheet PDF文件第5页浏览型号1N6375RL4的Datasheet PDF文件第7页浏览型号1N6375RL4的Datasheet PDF文件第8页 
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)  
APPLICATION NOTES  
RESPONSE TIME  
circuit layout, minimum lead lengths and placing the  
suppressor device as close as possible to the equipment or  
components to be protected will minimize this overshoot.  
In most applications, the transient suppressor device is  
placed in parallel with the equipment or component to be  
protected. In this situation, there is a time delay associated  
with the capacitance of the device and an overshoot  
condition associated with the inductance of the device and  
the inductance of the connection method. The capacitance  
effect is of minor importance in the parallel protection  
scheme because it only produces a time delay in the  
transition from the operating voltage to the clamp voltage as  
shown in Figure 8.  
The inductive effects in the device are due to actual  
turn-on time (time required for the device to go from zero  
current to full current) and lead inductance. This inductive  
effect produces an overshoot in the voltage across the  
equipment or component being protected as shown in  
Figure 9. Minimizing this overshoot is very important in the  
application, since the main purpose for adding a transient  
suppressor is to clamp voltage spikes. These devices have  
excellent response time, typically in the picosecond range  
and negligible inductance. However, external inductive  
effects could produce unacceptable overshoot. Proper  
Some input impedance represented by Z is essential to  
in  
prevent overstress of the protection device. This impedance  
should be as high as possible, without restricting the circuit  
operation.  
DUTY CYCLE DERATING  
The data of Figure 1 applies for non-repetitive conditions  
and at a lead temperature of 25°C. If the duty cycle increases,  
the peak power must be reduced as indicated by the curves  
of Figure 7. Average power must be derated as the lead or  
ambient temperature rises above 25°C. The average power  
derating curve normally given on data sheets may be  
normalized and used for this purpose.  
At first glance the derating curves of Figure 7 appear to be  
in error as the 10 ms pulse has a higher derating factor than  
the 10 ms pulse. However, when the derating factor for a  
given pulse of Figure 7 is multiplied by the peak power value  
of Figure 1 for the same pulse, the results follow the  
expected trend.  
TYPICAL PROTECTION CIRCUIT  
Z
in  
LOAD  
V
in  
V
L
V (TRANSIENT)  
in  
OVERSHOOT DUE TO  
INDUCTIVE EFFECTS  
V
V
V (TRANSIENT)  
in  
V
L
V
L
V
in  
t
d
t = TIME DELAY DUE TO CAPACITIVE EFFECT  
D
t
t
Figure 8.  
Figure 9.  
http://onsemi.com  
6
 
1...345678

下载PDF

与1N6375RL4相关器件

型号 品牌 描述 获取价格 数据表
1N6375RL4G ONSEMI 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

获取价格
1N6375TRE3 MICROSEMI Trans Voltage Suppressor Diode, 10V V(RWM), Unidirectional,

获取价格
1N6376 VISHAY TRANSZORB® Transient Voltage Suppressors

获取价格
1N6376 DIGITRON Transient Voltage Suppressor, Uni-directional; Max Peak Repetitive Reverse Voltage: 1500;

获取价格
1N6376 PROTEC Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon

获取价格
1N6376 TAITRON Trans Voltage Suppressor Diode,

获取价格

与1N6375RL4相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证