1N6373

更新时间： 2024-12-01 22:37:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	63K
描述
1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

1N6373 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	O-PALF-W2	针数：	2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.15
其他特性：	EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE	最小击穿电压：	6 V
外壳连接：	ISOLATED	最大钳位电压：	7.5 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e3	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
最高工作温度：	175 °C	最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	260
极性：	UNIDIRECTIONAL	最大功率耗散：	5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	5 V
子类别：	Transient Suppressors	表面贴装：	NO
技术：	ZENER	端子面层：	Tin (Sn)
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	40	Base Number Matches：	1

1N6373 数据手册

1N6373 - 1N6381 Series

(ICTE-5 - ICTE-36,

MPTE-5 - MPTE-45)

1500 Watt Peak Power

Mosorb Zener Transient

Voltage Suppressors

http://onsemi.com

Unidirectional*

Cathode

Anode

Mosorb devices are designed to protect voltage sensitive

components from high voltage, high–energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. These devices are

ON Semiconductor’s exclusive, cost-effective, highly reliable

Surmetic axial leaded package and are ideally-suited for use in

communication systems, numerical controls, process controls,

medical equipment, business machines, power supplies and many

other industrial/consumer applications, to protect CMOS, MOS and

Bipolar integrated circuits.

AXIAL LEAD

CASE 41A

PLASTIC

MPTE

–xx

63xx

YYWW

Specification Features:

• Working Peak Reverse Voltage Range – 5 V to 45 V

• Peak Power – 1500 Watts @ 1 ms

• ESD Rating of Class 3 (>16 KV) per Human Body Model

• Maximum Clamp Voltage @ Peak Pulse Current

• Low Leakage < 5 mA Above 10 V

ICTE

–xx

YYWW

L = Assembly Location

MPTE–xx = ON Device Code

ICTE–xx = ON Device Code

1N63xx = JEDEC Device Code

YY = Year

• Response Time is Typically < 1 ns

Mechanical Characteristics:

CASE: Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

WW = Work Week

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230°C, 1/16″ from the case for 10 seconds

POLARITY: Cathode indicated by polarity band

MOUNTING POSITION: Any

ORDERING INFORMATION

Device

Package

Shipping

500 Units/Box

MPTE–xx

Axial Lead

MAXIMUM RATINGS

MPTE–xxRL4

Axial Lead 1500/Tape & Reel

Rating

Symbol

Value

Unit

ICTE–xx

Axial Lead

500 Units/Box

Peak Power Dissipation (Note 1.)

1500

Watts

@ T ≤ 25°C

ICTE–xxRL4

Axial Lead 1500/Tape & Reel

Steady State Power Dissipation

5.0

Watts

1N63xx

Axial Lead

500 Units/Box

@ T ≤ 75°C, Lead Length = 3/8″

Derated above T = 75°C

mW/°C

°C/W

1N63xxRL4*

Axial Lead 1500/Tape & Reel

Thermal Resistance, Junction–to–Lead

Forward Surge Current (Note 2.)

NOTES:

200

Amps

1. Nonrepetitive current pulse per Figure 5 and der-

FSM

ated above T = 25°C per Figure 2.

@ T = 25°C

2. 1/2 sine wave (or equivalent square wave), PW =

8.3 ms, duty cycle = 4 pulses per minute maxi-

mum.

Operating and Storage

Temperature Range

T , T

– 65 to

+175

°C

stg

*Please see 1N6382 – 1N6389 (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)

for Bidirectional Devices

*1N6378 Not Available in 1500/Tape & Reel

Semiconductor Components Industries, LLC, 2002

Publication Order Number:

June, 2002 – Rev. 2

1N6373/D

12 3 4 5 6 7 8

中文翻译

下载PDF

1N6373 替代型号

型号	品牌	替代类型	描述	数据表
MPTE-5RL4	ONSEMI	完全替代	1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
1N5908RL4	ONSEMI	类似代替	1500 Watt Mosorb TM Zener Transient Voltage Suppressors
ICTE-5RL4	ONSEMI	类似代替	1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

与1N6373相关器件

型号	品牌	获取价格	描述	数据表
1N6373/1	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/100-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/1-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, 1.5KE, 2 PIN, Transient Suppres
1N6373/4	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/4E-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, PLAS
1N6373/4G-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6373/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional,
1N6373/51-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su

与1N6373相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

54
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

45
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

71
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

67

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373

1N6373 技术参数

1N6373 数据手册

1N6373 替代型号

与1N6373相关器件

与1N6373相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6373

1N6373 技术参数

1N6373 数据手册

1N6373 替代型号

与1N6373相关器件

与1N6373相关文章

您还可以找

您在本页遇到什么问题？