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1N6356E3TR PDF预览

1N6356E3TR

更新时间： 2024-11-29 15:43:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
3页 165K
描述
Trans Voltage Suppressor Diode, 1500W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA, ROHS COMPLIANT, HERMETIC SEALED, METAL, DO-13, 2 PIN

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1N6356E3TR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-13
包装说明：O-MALF-W2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.54
最小击穿电压：6 V外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-202AA
JESD-30 代码：O-MALF-W2JESD-609代码：e3
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2封装主体材料：METAL
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1 W认证状态：Not Qualified
最大重复峰值反向电压：5 V表面贴装：NO
技术：AVALANCHE端子面层：MATTE TIN
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1N6356E3TR 数据手册

 浏览型号1N6356E3TR的Datasheet PDF文件第2页浏览型号1N6356E3TR的Datasheet PDF文件第3页 
1N6356 thru 1N6372, e3  
or MPT-5 thru MPT-45C, e3  
1500 W LOW CLAMPING FACTOR  
TRANSIENT VOLTAGE SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This Transient Voltage Suppressor (TVS) series for 1N6356 thru 1N6372 are  
JEDEC registered selections for both unidirectional and bidirectional devices.  
The 1N6356 thru 1N6364 are unidirectional and the 1N6365 thru 1N6372 are  
bi-directional where they all provide a very low specified clamping factor for  
minimal clamping voltages (VC) above their respective breakdown voltages  
(VBR) as specified herein. They are most often used in protecting sensitive  
components from inductive switching transients or induced secondary  
lightning effects as found in lower surge levels of IEC61000-4-5 . They are  
also very successful in protecting airborne avionics and electrical systems.  
Since their response time is virtually instantaneous, they can also protect  
DO-13  
(DO-202AA)  
from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Unidirectional and bidirectional TVS series for thru-hole  
mounting  
• Designed to protect Bipolar and MOS Microprocessor  
based systems.  
•
•
Suppresses transients up to 1500 watts @ 10/1000 µs  
• Protection from switching transients and induced RF  
• ESD and EFT protection per IEC 61000-4-2 and -4-4  
t
clamping (0 volts to V(BR) min):  
Unidirectional – Less than 100 pico seconds.  
Bidirectional – Less than 5 nano seconds.  
• Secondary lightning protection per IEC61000-4-5 with  
42 Ohms source impedance:  
•
•
Working voltage (VWM) range 5 V to 45 V  
Class 1, 2 & 3 1N6356 to 1N6372  
Class 4: 1N6356 to 1N6362  
Low clamping factor (ratio of actual VC/VBR): 1.33 @  
full rated power and 1.20 @ 50% rated power  
• Secondary lightning protection per IEC61000-4-5 with  
•
•
Hermetic sealed DO-13 metal package  
12 Ohms source impedance:  
Options for screening in accordance with MIL-PRF-19500  
for JAN, JANTX, JANTXV, and JANS are also available  
by adding MQ, MX, MV, SP prefixes respectively to part  
numbers, e.g. MX1N6356, etc.  
Class 1 & 2: 1N6356 to 1N6372  
Class 3: 1N6356 to 1N6362  
Class 4: 1N6356 to 1N6358  
• Secondary lightning protection per IEC61000-4-5 with  
•
•
RoHS Compliant devices available by adding “e3” suffix  
2 Ohms source impedance:  
Surface mount equivalent packages also available as  
SMCJ6356 – SMCJ6372 (consult factory for other  
surface mount options)  
Class 2: 1N6356 to 1N6361  
Class 3: 1N6356 to 1N6358  
• Inherently radiation hard per Microsemi MicroNote  
•
Plastic axial-leaded equivalents available in the  
1N6373 – 1N6389 series (see separate data sheet)  
050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
1500 Watts for 10/1000 μs with repetition rate of 0.01% or  
•
CASE: DO-13 (DO-202AA), welded, hermetically  
sealed metal and glass  
less* at lead temperature (TL) 25oC (See Figs. 1, 2, & 4)  
•
•
Operating & Storage Temperatures: -65o to +175oC  
•
•
FINISH: All external metal surfaces are Tin-Lead or  
RoHS Compliant annealed matte-Tin plating  
solderable per MIL-STD-750 method 2026  
THERMAL RESISTANCE: 50oC/W junction to lead at  
0.375 inches (10 mm) from body or 110 oC/W junction to  
ambient when mounted on FR4 PC board with 4 mm2  
copper pads (1 oz) and track width 1 mm, length 25 mm  
POLARITY: Cathode connected to case and  
polarity indicated by diode symbol  
DC Power Dissipation*: 1 Watt at TL < +125oC 3/8” or 10  
mm from body (also see Figure 5)  
•
•
•
MARKING: Part number and polarity diode symbol  
WEIGHT: 1.4 grams. (Approx)  
•
•
•
Forward surge current: 200 Amps for 8.3ms half-sine  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
wave at TA = +25oC for unidirectional only (1N6356-6364)  
Solder Temperatures: 260 o C for 10 s (maximum)  
•
See package dimension on last page  
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage  
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).  
Copyright © 2007  
Microsemi  
Page 1  
10-03-2007 REV C  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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