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1N6311US PDF预览

1N6311US

更新时间: 2024-11-15 22:37:43
品牌 Logo 应用领域
CDI-DIODE 稳压二极管齐纳二极管测试
页数 文件大小 规格书
2页 112K
描述
500 mW ZENER DIODES

1N6311US 技术参数

生命周期:Transferred包装说明:HERMETIC SEALED, GLASS, D-5D, 2 PIN
Reach Compliance Code:unknown风险等级:5.6
Is Samacsys:N其他特性:METALLURGICALLY BONDED
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-LELF-R2JESD-609代码:e0
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:3 V表面贴装:YES
技术:ZENER端子面层:TIN LEAD
端子形式:WRAP AROUND端子位置:END
最大电压容差:5%工作测试电流:20 mA
Base Number Matches:1

1N6311US 数据手册

 浏览型号1N6311US的Datasheet PDF文件第2页 
1N6309US  
THRU  
• AVAILABLE IN JAN, JANTX, JANTXV AND JANS  
PER MIL-PRF-19500/533  
1N6320US  
• 500 mW ZENER DIODES  
• NON CAVITY CONSTRUCTION  
• METALLURGICALLY BONDED  
MAXIMUM RATINGS  
Operating Temperature: -65°C to +175°C  
Storage Temperature: -65°C to +175°C  
Power Dissapation: 500 mW@T =+125ºC  
EC  
Power Derating: 10 mW/°C above T =+125ºC  
EC  
Forward Voltage: 1.4V dc @ I =1A dc (pulsed)  
F
MILLIMETERS  
INCHES  
DIM MIN  
MAX  
2.16  
0.71  
4.95  
MIN MAX  
0.070 0.085  
0.019 0.028  
0.165 0.195  
0.003MIN.  
D
F
G
1.78  
0.48  
4.19  
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified  
S
0.08MIN.  
V
NOM.  
V
MIN.  
I
Z
@
Z
@
I
V
(reg)  
I
V
I
I
N
D
@250 µA  
Z2  
Z1  
Z2  
Z
ZK  
ZM  
Z
ZSM  
SURGE  
R
R1  
@
R2  
@
TEST  
TYPE  
±5% @  
@I  
250µ A  
CURRENT  
I
250µ A  
(1)  
VZ  
25ºC TA=  
150ºC  
1-3 kHz  
Z1  
Z2  
FIGURE 1  
I
Z2  
VOLTS VOLTS  
mA  
OHMS  
OHMS  
mA  
VOLTS AMPS VOLTS µ A  
µ A µ V/ Hz  
1N6309US  
1N6310US  
1N6311US  
1N6312US  
2.4  
2.7  
3.0  
3.3  
1.1  
1.2  
1.3  
1.5  
20  
20  
20  
20  
30  
30  
29  
24  
1200  
1300  
1400  
1400  
177  
157  
141  
128  
1.5  
1.5  
1.5  
1.6  
2.5  
2.2  
2.0  
1.8  
1.0  
1.0  
1.0  
1.0  
100  
60  
30  
200  
150  
100  
20  
1.0  
1.0  
1.0  
1.0  
DESIGN DATA  
5.0  
1N6313US  
1N6314US  
1N6315US  
1N6316US  
3.6  
3.9  
4.3  
4.7  
1.8  
2.0  
2.4  
2.8  
20  
20  
20  
20  
22  
20  
18  
16  
1400  
1700  
1400  
1500  
117  
108  
99  
1.6  
1.6  
0.9  
0.5  
1.65  
1.5  
1.4  
1.0  
1.0  
1.0  
1.5  
3.0  
2.0  
2.0  
5.0  
12  
12  
12  
12  
1.0  
1.0  
1.0  
1.0  
CASE: D-5D, Hermetically sealed glass  
case, per MIL-PRF- 19500/533  
90  
1.27  
1N6317US  
1N6318US  
1N6319US  
1N6320US  
5.1  
5.6  
6.2  
6.8  
3.3  
4.3  
5.2  
6.0  
20  
20  
20  
20  
14  
8.0  
3.0  
3.0  
1300  
1200  
800  
83  
76  
68  
63  
0.4  
0.4  
0.3  
1.17  
1.10  
0.97  
1.23  
2.0  
2.5  
3.5  
4.0  
5.0  
5.0  
5.0  
2.0  
12  
10  
10  
50  
1.0  
2.0  
5.0  
5.0  
LEAD FINISH: Tin / Lead  
400  
0.35  
THERMAL RESISTANCE: (R  
50 ˚C/W maximum  
):  
OJEC  
NOTE 1:  
V = V @ 20 mAdc minus V @ 2mAdc  
Z Z Z  
THERMAL IMPEDANCE: (Z  
˚C/W maximum  
): 15  
OJX  
POLARITY: Diode to be operated with  
the banded (cathode) end positive.  
MOUNTING SURFACE SELECTION:  
The Axial Coefficient of Expansion  
(COE) of this device is approximately  
+ 4PPM / °C. The COE of the Mounting  
Surface System should be selected to  
provide a suitable match with this  
device.  
22 COREY STREET, MELROSE, MASSACHUSETTS 02176  
PHONE (781) 665-1071  
WEBSITE: http://www.cdi-diodes.com  
FAX (781) 665-7379  
E-mail: mail@cdi-diodes.com  

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