Datasheet > 1N6275-E3

1N6275-E3

更新时间： 2024-10-27 18:00:19

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
7页	170K
描述
Trans Voltage Suppressor Diode, 12.1V V(RWM), Unidirectional,

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1N6275-E3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.83
击穿电压标称值：	15 V	最大钳位电压：	22 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-609代码：	e3
极性：	UNIDIRECTIONAL	最大重复峰值反向电压：	12.1 V
子类别：	Transient Suppressors	表面贴装：	NO
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

1N6275-E3 数据手册

1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303

Vishay Semiconductors

TRANSZORB Transient Voltage Suppressors

Major Ratings and Characteristics

V_(BR)Unidirectional

6.8 V to 540 V

6.8 v to 440 V

1500 W

_(BR)Bidirectional

P_PPM

P_M(AV)

6.5 W

_FSM(Unidirectional only)

T_jmax.

200 A

175 °C

Case Style 1.5KE

Features

• Glass passivated chip junction

• Available in Unidrectional and Bidirectional

• 1500 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty cycle):

0.01 %

• Excellent clamping capability

• Very fast response time

Mechanical Data

Case: Molded plastic body over passivated junction

Epoxy meets UL-94V-0 Flammability rating

Terminals: Matte tin plated (E3 Suffix) leads, solder-

able per J-STD-002B and MIL-STD-750, Method

2026

Polarity: For unidirectional types the color band

denotes cathode end, no marking on bidirectional

types

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020C

• AEC-Q101 qualified

Typical Applications

Use in sensitive electronics protection against voltage

Devices for bidirection Applications

transients induced by inductive load switching and For bidirectional types, use C or CA suffix for types

lighting on ICs, MOSFET, signal lines of sensor units (e.g. 1.5KE440CA).

for consumer, computer, industrial, automotive, and

Telecommunication

Electrical characteristics apply in both directions.

Maximum Ratings

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol

P_PPM

Limit

1500

Unit

Peak pulse power dissipation with a 10/1000 µs waveform^{(1) (Fig. 1)}

Peak pulse current with a 10/1000 µs waveform⁽¹⁾

Steady state power dissipation lead lengths 0.375“ (9.5 mm)⁽²⁾

T_L= 75 °C

I_PPM

See Next Table

6.5

P_M(AV)

Peak forward surge current 8.3 ms single half sine-wave unidirectional

only⁽³⁾

I_FSM

200

Maximum instantaneous forward voltage at 100 A for unidirectional only⁽⁴⁾

Operating junction and storage temperature range

V_F

3.5/5.0

T_J, T_STG

- 55 to + 175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on copper pad area of 1.6 x 1.6" (40 x 40 mm) per Fig. 5

(3) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(4) V_F= 3.5 V for 1.5KE220(A) & below; V_F= 5.0 V for 1.5KE250(A) & above

Document Number 88301

03-Mar-05

www.vishay.com

12 3 4 5 6 7

中文翻译

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与1N6275-E3相关器件

型号	品牌	获取价格	描述	数据表
1N6275-E3/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6275-E3/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6275-E3/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6275-E3/4H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6275-E3/56	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6275-E3/58	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6275-E3/65	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6275-E3/68	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6275-E3/70	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6275-E3/90	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, P

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