Datasheet > 1N6276

1N6276

更新时间： 2024-10-28 05:56:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		二极管
页数	文件大小	规格书
4页	119K
描述
TRANSIENT VOLTAGE SUPPRESSOR

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1N6276 数据手册

GALAXY ELECTRICAL

1N6267- - -1N6303A

BREAKDOWN VOLTAGE: 6.8 --- 200 V

PEAK PULSE POWER: 1500 W

TRANSIENT VOLTAGE SUPPRESSOR

FEATURES

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

DO-201AE

Glass passivated junction

1500W peak pulse power capability with a 10/1000μs

waveform, repetition rate (duty cycle): 0.05%

Excellent clamping capability

Low incremental surge resistance

Fast response time: typically less than 1.0ps from 0 Volts to

V^(BR)for uni-directional and 5.0ns for bi-directional types

For devices with V(BR) 10V,ID are typically less than 1.0μA

High temperature soldering guaranteed:265 / 10 seconds,

0.375"(9.5mm) lead length, 51bs. (2.3kg) tension

MECHANICAL DATA

Case:JEDEC DO-201AE, molded plastic

Polarity: Color band denotes positive end

( cathode ) except for bidirectional

Weight: 0.032 ounces, 0.9 grams

Mounting position: Any

DEVICES FOR BIDIRECTIONAL APPLICATIONS

For bi-directional use C or CA suffixfor types 1N6267 thru types 1N6303A (e.g. 1N6267, 1N6303A).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

P_PPM

VALUE

UNIT

Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE1, FIG.1)

Peak pulse current w ith a 10/1000μs w aveform (NOTE1)

Minimum 1500

SEE TABLE 1

I_PPM

Steady state pow er dissipation at T_L=75

ffffflead lengths 0.375"(9.5mm) (NOTE2)

P_M(AV)

I_FSM

6.5

Peak forw ard surge current, 8.3ms single half

ffffsine-w ave superimposed on rated load (JEDEC Method) (NOTE3)

200.0

Maximum instantaneous forw ard voltage at 100 A for unidirectional only (NOTE4)

Typical thermal resistance junction-to-lead

V_F

R_θ_JL

3.5/5.0

Typical thermal resistance junction-to-ambient

R_θ_JA

Operating junction and storage temperature range

T_J, T_STG

-50---+175

NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T_A=25 per Fig. 2

(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm²) per Fig. 5

www.galaxycn.com

(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum

(4) V_F=3.5 Volt max. for devices of V_(BR)200V, and V_F=5.0 Volt max. for devices of V_(BR)>200V

BLGALAXY ELECTRICAL

Document Number 0285011

12 3 4

中文翻译

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与1N6276相关器件

型号	品牌	获取价格	描述	数据表
1N6276/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.9V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6276/100-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6276/4	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.9V V(RWM), Unidirectional, 1 Element, Silicon
1N6276/4G-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6276/4H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.9V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6276/4H-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6276/51-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6276/53	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.9V V(RWM), Unidirectional, 1 Element, Silicon, P
1N6276/53-E3	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6276/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 12.9V V(RWM), Unidirectional, 1 Element, Silicon, P

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