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1N6263W PDF预览

1N6263W

更新时间: 2024-02-01 04:27:37
品牌 Logo 应用领域
商升特 - SEMTECH 肖特基二极管光电二极管
页数 文件大小 规格书
3页 248K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

1N6263W 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.66Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.4 W认证状态:Not Qualified
最大反向恢复时间:0.001 µs表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:DUALBase Number Matches:1

1N6263W 数据手册

 浏览型号1N6263W的Datasheet PDF文件第1页浏览型号1N6263W的Datasheet PDF文件第3页 
1N6263W  
Characteristics at Tamb = 25  
Symbol  
V(BR)R  
Min.  
60  
Typ.  
-
Max.  
-
Unit  
V
Reverse Breakdown Voltage  
at IR = 10μA  
at IF = 1mA  
at IF = 15mA  
VFM  
VFM  
-
-
-
-
0.41  
1.0  
V
V
Forward Voltage Drop  
Reverse Leakage Current  
at VR = 50V  
IRM  
Ctot  
trr  
-
-
-
-
-
-
200  
2.2  
1
nA  
pF  
ns  
Total Capacitance  
at VR = 0V, f = 1MHz  
Reverse Recovery Time  
at IF = IR = 5mA , Irr=0.1x IR, RL=100Ω  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 12/08/2004  

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