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1N6267

更新时间： 2024-01-18 03:06:35
品牌 Logo 应用领域
DAESAN 二极管
页数 文件大小 规格书
4页 119K
描述
TRANSIENT VOLTAGE SUPPRESSOR

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中文翻译

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1N6267 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：MELF
包装说明：O-LELF-R2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.11
最小击穿电压：6.12 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-LELF-R2
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
认证状态：Not Qualified表面贴装：YES
技术：AVALANCHE端子形式：WRAP AROUND
端子位置：END处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

1N6267 数据手册

 浏览型号1N6267的Datasheet PDF文件第2页浏览型号1N6267的Datasheet PDF文件第3页浏览型号1N6267的Datasheet PDF文件第4页 
GALAXY ELECTRICAL  
1N6267- - -1N6303A  
BL  
BREAKDOWN VOLTAGE: 6.8 --- 200 V  
PEAK PULSE POWER: 1500 W  
TRANSIENT VOLTAGE SUPPRESSOR  
FEATURES  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
DO-201AE  
Glass passivated junction  
1500W peak pulse power capability with a 10/1000μs  
waveform, repetition rate (duty cycle): 0.05%  
Excellent clamping capability  
Low incremental surge resistance  
Fast response time: typically less than 1.0ps from 0 Volts to  
V(BR) for uni-directional and 5.0ns for bi-directional types  
For devices with V(BR) 10V,ID are typically less than 1.0μA  
High temperature soldering guaranteed:265 / 10 seconds,  
0.375"(9.5mm) lead length, 51bs. (2.3kg) tension  
MECHANICAL DATA  
Case:JEDEC DO-201AE, molded plastic  
Polarity: Color band denotes positive end  
( cathode ) except for bidirectional  
Weight: 0.032 ounces, 0.9 grams  
Mounting position: Any  
DEVICES FOR BIDIRECTIONAL APPLICATIONS  
For bi-directional use C or CA suffixfor types 1N6267 thru types 1N6303A (e.g. 1N6267, 1N6303A).  
Electrical characteristics apply in both directions.  
MAXIMUM RATINGS AND CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
SYMBOL  
PPPM  
VALUE  
UNIT  
W
Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE1, FIG.1)  
Peak pulse current w ith a 10/1000μs w aveform (NOTE1)  
Minimum 1500  
SEE TABLE 1  
IPPM  
A
Steady state pow er dissipation at TL=75  
ffffflead lengths 0.375"(9.5mm) (NOTE2)  
PM(AV)  
IFSM  
6.5  
W
A
Peak forw ard surge current, 8.3ms single half  
ffffsine-w ave superimposed on rated load (JEDEC Method) (NOTE3)  
200.0  
Maximum instantaneous forw ard voltage at 100 A for unidirectional only (NOTE4)  
Typical thermal resistance junction-to-lead  
VF  
RθJL  
3.5/5.0  
20  
V
/W  
/W  
Typical thermal resistance junction-to-ambient  
RθJA  
75  
Operating junction and storage temperature range  
TJ, TSTG  
-50---+175  
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above TA=25 per Fig. 2  
(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm2) per Fig. 5  
www.galaxycn.com  
(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum  
(4) VF=3.5 Volt max. for devices of V(BR) 200V, and VF=5.0 Volt max. for devices of V(BR) >200V  
BLGALAXY ELECTRICAL  
1.  
Document Number 0285011  
1234

中文翻译

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 		Trans Voltage Suppressor Diode, 1500W, 5.5V V(RWM), Unidirectional, 1 Element, Silicon, PL
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 		Trans Voltage Suppressor Diode, 5.5V V(RWM), Unidirectional,
1N6267/51-E3 VISHAY

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 		DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Su
1N6267/53 VISHAY

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 		Trans Voltage Suppressor Diode, 1500W, 5.5V V(RWM), Unidirectional, 1 Element, Silicon, PL

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