1N6263-TAP

更新时间： 2024-01-27 08:01:01

品牌	Logo	应用领域
威世 - VISHAY		整流二极管肖特基二极管
页数	文件大小	规格书
2页	104K
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数据手册

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1N6263-TAP 数据手册

1N5711 and 1N6263

Schottky Diodes

DO-204AH (DO-35 Glass)

Features

• For general purpose applications

• Metal-on-silicon Schottky barrier device which is

protected by a PN junction guard ring. The low for-

ward voltage drop and fast switching make it ideal

for protection of MOS devices, steering, biasing

and coupling diodes for fast switching and low

logic level applications.

• This diode is also available in the MiniMELF case

with type designation LL5711 and LL6263.

Mechanical Data

Dimensions in inches

and (millimeters)

Case: DO-35 Glass Case

Weight: approx. 0.13g

Packaging Codes/Options:

D7/10K per 13” reel (52mm tape), 20K/box

D8/10K per Ammo tape (52mm tape), 20K/box

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Unit

1N5711

1N6263

Peak Inverse Voltage

Power Dissipation (Infinite Heatsink)

V_RRM

P_tot

I_FSM

R_ΘJA

T_j

400⁽¹⁾

Maximum Single Cycle Surge 10 µs Square Wave

Thermal Resistance Junction to Ambient Air

Junction Temperature

2.0

0.3⁽¹⁾

°C/mW

°C

125⁽¹⁾

Storage Temperature Range

T_S

–55 to +150⁽¹⁾

°C

Electrical Characteristics(T_J= 25°C unless otherwise noted)

Parameter

Symbol

V_(BR)R

I_R

Test Condition

Min

Typ

Max

Unit

1N5711

1N6263

—

Reverse Breakdown Voltage

Leakage Current

I_{R =}10µA

V_R= 50V

—

200

I_F= 1mA

I_F= 15mA

—

0.41

1.0

Forward Voltage Drop

Junction Capacitance

Reverse Recovery Time

V_F

C_tot

V_R= 0V, f = 1MHz

—

2.2

I_F= I_R= 5mA,

recover to 0.1I_R

t_rr

—

Note: (1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature.

10/6/00

中文翻译

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与1N6263-TAP相关器件

型号	品牌	获取价格	描述	数据表
1N6263TR	CENTRAL	获取价格	Rectifier Diode, Schottky, 1 Element, 0.015A, 60V V(RRM), Silicon, DO-35, DO-35, 2 PIN
1N6263-TR	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 60V V(RRM),
1N6263TR-RECU	CENTRAL	获取价格	Rectifier Diode, Schottky, 1 Element, 0.015A, 60V V(RRM), Silicon, DO-35, DO-35, 2 PIN
1N6263TR-RMCU	CENTRAL	获取价格	Rectifier Diode, Schottky, 1 Element, 0.015A, 60V V(RRM), Silicon, DO-35, DO-35, 2 PIN
1N6263W	TYSEMI	获取价格	Low Forward Voltage Drop Guard Ring Constuction for Transient Protection
1N6263W	KEXIN	获取价格	SMALL SIGNAL DIODES
1N6263W	SEMTECH	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
1N6263W	TSC	获取价格	Surface Mount Schottky Barrier Diode
1N6263W	DIODES	获取价格	SURFACE MOUNT SCHOTTKY BARRIER DIODE
1N6263W	WINNERJOIN	获取价格	Low Forward Voltage Dropnull