是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | O-XELF-N2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
Factory Lead Time: | 17 weeks | 风险等级: | 5.28 |
其他特性: | METALLURGICALLY BONDED | 最小击穿电压: | 34.2 V |
击穿电压标称值: | 34.2 V | 外壳连接: | ISOLATED |
最大钳位电压: | 49.9 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | O-XELF-N2 | JESD-609代码: | e0 |
最大非重复峰值反向功率耗散: | 500 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | UNSPECIFIED |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 1.5 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 27.4 V | 子类别: | Transient Suppressors |
表面贴装: | YES | 技术: | ZENER |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子位置: | END | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JAN1N6119AUS | SEMTECH |
完全替代 |
Trans Voltage Suppressor Diode, 500W, 27.4V V(RWM), Unidirectional, 1 Element, Silicon, HE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N6119AUSE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 27.4V V(RWM), Bidirectional, | |
1N6119AUSS | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, | |
1N6119AUSV | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, | |
1N6119AX | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, | |
1N6119C | NJSEMI |
获取价格 |
Diode TVS Single Bi-Dir 27.4V 500W 2-Pin SMD | |
1N6119CA | NJSEMI |
获取价格 |
Diode TVS Single Bi-Dir 27.4V 500W 2-Pin SMD | |
1N6119S | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, | |
1N6119US | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 27.4V V(RWM), Bidirectional, 1 Element, Silicon, HER | |
1N6119US | SEMTECH |
获取价格 |
500W Bipolar Transient Voltage Suppressor Surface Mount (US) | |
1N6119US | SENSITRON |
获取价格 |
Trans Voltage Suppressor Diode, 500W, 27.4V V(RWM), Unidirectional, 1 Element, Silicon, HE |