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1N5951B PDF预览

1N5951B

更新时间: 2024-01-21 21:35:14
品牌 Logo 应用领域
EIC 稳压二极管齐纳二极管测试
页数 文件大小 规格书
4页 101K
描述
SILICON ZENER DIODES

1N5951B 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.8
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:380 Ω元件数量:1
最高工作温度:200 °C最大功率耗散:1.5 W
标称参考电压:120 V子类别:Voltage Reference Diodes
表面贴装:NO最大电压容差:1%
工作测试电流:3.1 mABase Number Matches:1

1N5951B 数据手册

 浏览型号1N5951B的Datasheet PDF文件第2页浏览型号1N5951B的Datasheet PDF文件第3页浏览型号1N5951B的Datasheet PDF文件第4页 
Certificate TH97/10561QM  
Certificate TW00/17276EM  
SILICON ZENER DIODES  
1N5913B - 1N5957B  
DO - 41  
VZ : 3.3 - 240 Volts  
PD : 3 Watts  
1.00 (25.4)  
0.108 (2.74)  
MIN.  
FEATURES :  
0.079 (1.99)  
* Complete Voltage Range 3.3 to 200 Volts  
* High peak reverse power dissipation  
* High reliability  
0.205 (5.20)  
0.161 (4.10)  
* Low leakage current  
* Pb / RoHS Free  
1.00 (25.4)  
0.034 (0.86)  
MIN.  
0.028 (0.71)  
MECHANICAL DATA  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.335 gram  
MAXIMUM RATINGS  
Rating at 25°C ambient temperature unless otherwise specified  
Rating  
Symbol  
Value  
Unit  
PD  
Maximum Steady state Power Dissipation  
@ TL = 75 ºC, Lead Length = 3/8"  
Derate above 75 ºC  
3.0  
W
24  
mW/ºC  
W
PD  
Steady State Power Dissipation  
@ TL = 50 ºC, Lead Length = 3/8"  
Derate above 50 ºC  
1.0  
6.67  
mW/ºC  
°C  
TJ,TSTG  
Operating and Storage Temperature Range  
- 65 to + 200  
Page 1 of 4  
Rev. 07 : June 7, 2006  

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