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1N5951B PDF预览

1N5951B

更新时间: 2024-02-06 03:32:03
品牌 Logo 应用领域
EIC 稳压二极管齐纳二极管测试
页数 文件大小 规格书
4页 101K
描述
SILICON ZENER DIODES

1N5951B 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.8
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:380 Ω元件数量:1
最高工作温度:200 °C最大功率耗散:1.5 W
标称参考电压:120 V子类别:Voltage Reference Diodes
表面贴装:NO最大电压容差:1%
工作测试电流:3.1 mABase Number Matches:1

1N5951B 数据手册

 浏览型号1N5951B的Datasheet PDF文件第1页浏览型号1N5951B的Datasheet PDF文件第2页浏览型号1N5951B的Datasheet PDF文件第4页 
Certificate TH97/10561QM  
Certificate TW00/17276EM  
RATING AND CHARACTERISTIC CURVES ( 1N5913B - 1N5957B )  
FIG. 1 - POWER TEMPERATURE DERATING CURVE  
5
L = LEAD  
L = 1/8"  
LENGTH  
TO HEAT SINK  
4
L = 3/8"  
3
2
L = 1"  
1
0
0
40  
80  
120  
160  
200  
TL, LEAD TEMPERATURE (°C)  
FIG. 2 - TYPICAL THERMAL RESPONSE L, LEAD LENTGTH = 3/8 INCH  
30  
20  
D = 0.5  
D = 0.2  
10  
D = 0.1  
t1  
t2  
t2  
D = 0.05  
D = 0.02  
D =  
t2  
PPK  
1
Note : Below 0.1 second, Thermal  
D = 0.01  
Single Pulse ΔTJL = ӨJL(t)PPK  
response curve is  
applicable  
Repetitive Pulse ΔTJL = ӨJL(t,D)PPK  
D = 0  
to any lead length (L).  
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
t, TIME (SECONS)  
FIG. 3 - MAXIMUM SURGE POWER  
FIG. 4 - TYPICAL REVERSE LEAKAGE  
1000  
3
2
1
RECTANGULAR  
NONREPETITIVE  
WAVEFORM  
Ta = 125 °C  
TJ = 25 °C PRIOR  
0.1  
TO INITIAL PULSE  
100  
0.01  
Ta = 25 °C  
0.001  
0.0001  
10  
10  
1
100  
1000  
0.1  
1
10  
100  
NOMINAL VZ (VOLTS)  
PW, PULS WIDTH (ms)  
Page 3 of 4  
Rev. 07 : June 7, 2006  

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