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1N5919BRLG PDF预览

1N5919BRLG

更新时间： 2024-11-01 06:25:07
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器二极管齐纳二极管测试
页数 文件大小 规格书
8页 70K
描述
3 W DO−41 Surmetic TM 30 Zener Voltage Regulators

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中文翻译

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1N5919BRLG 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：DO-41包装说明：O-PALF-W2
针数：2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：1 week风险等级：0.56
Is Samacsys：N外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODE最大动态阻抗：2 Ω
JEDEC-95代码：DO-41JESD-30 代码：O-PALF-W2
JESD-609代码：e3元件数量：1
端子数量：2最高工作温度：200 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
最大功率耗散：1 W认证状态：Not Qualified
标称参考电压：5.6 V子类别：Voltage Reference Diodes
表面贴装：NO技术：ZENER
端子面层：Tin (Sn)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：40
最大电压容差：5%工作测试电流：66.9 mA
Base Number Matches：1

1N5919BRLG 数据手册

 浏览型号1N5919BRLG的Datasheet PDF文件第2页浏览型号1N5919BRLG的Datasheet PDF文件第3页浏览型号1N5919BRLG的Datasheet PDF文件第4页浏览型号1N5919BRLG的Datasheet PDF文件第5页浏览型号1N5919BRLG的Datasheet PDF文件第6页浏览型号1N5919BRLG的Datasheet PDF文件第7页 
1N5913B Series  
3 W DO−41 Surmetict 30  
Zener Voltage Regulators  
This is a complete series of 3 W Zener diodes with limits and  
excellent operating characteristics that reflect the superior capabilities  
of silicon−oxide passivated junctions. All this in an axial−lead,  
transfer−molded plastic package that offers protection in all common  
environmental conditions.  
http://onsemi.com  
Features  
Cathode  
Anode  
• Zener Voltage Range − 3.3 V to 200 V  
• ESD Rating of Class 3 (>16 KV) per Human Body Model  
• Surge Rating of 98 W @ 1 ms  
• Maximum Limits Guaranteed on up to Six Electrical Parameters  
• Package No Larger than the Conventional 1 W Package  
• Pb−Free Packages are Available  
AXIAL LEAD  
CASE 59  
PLASTIC  
STYLE 1  
Mechanical Characteristics  
CASE: Void free, transfer−molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:  
260°C, 1/16″ from the case for 10 seconds  
MARKING DIAGRAM  
A
1N  
59xxB  
YYWWG  
G
POLARITY: Cathode indicated by polarity band  
MOUNTING POSITION: Any  
A
= Assembly Location  
1N59xxB = Device Number  
YY  
WW  
G
= Year  
= Work Week  
= Pb−Free Package  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
(Note: Microdot may be in either location)  
Max. Steady State Power Dissipation  
P
3
W
D
@ T = 75°C, Lead Length = 3/8″  
Derate above 75°C  
L
24  
1
mW/°C  
ORDERING INFORMATION  
Steady State Power Dissipation  
P
W
D
†
Device  
Package  
Shipping  
@ T = 50°C  
Derate above 50°C  
A
6.67  
mW/°C  
°C  
1N59xxB, G  
Axial Lead  
(Pb−Free)  
2000 Units/Box  
Operating and Storage  
Temperature Range  
T , T  
−65 to  
+200  
J
stg  
1N59xxBRL, G  
Axial Lead  
(Pb−Free)  
6000/Tape & Reel  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 5  
1N5913B/D  
12345678

中文翻译

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1N5919BRLG 替代型号

型号 品牌 替代类型 描述 数据表
1N5919BG ONSEMI

类似代替

 3 W DO−41 Surmetic TM 30 Zener Voltage Regulators
1N5919B ONSEMI

类似代替

 3 W DO−41 Surmetic TM 30 Zener Voltage Regulators
BZV85-C5V6,113 NXP

功能相似

 BZV85 series - Voltage regulator diodes DO-4 2-Pin

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1N5919BUR-1B MICROSEMI

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 		Zener Diode, 5.6V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA
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 		Zener Diode, 5.6V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA
1N5919BUR-1C MICROSEMI

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 		Zener Diode, 5.6V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA
1N5919BUR-1CTR MICROSEMI

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 		Zener Diode, 5.6V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA
1N5919BUR-1D MICROSEMI

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 		暂无描述
1N5919BUR-1DTR MICROSEMI

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 		Zener Diode, 5.6V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA

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