是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-213AB |
包装说明: | O-LELF-R2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.41 |
Is Samacsys: | N | 其他特性: | METALLURGICALLY BONDED, HIGH RELIABILITY |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | ZENER DIODE |
最大动态阻抗: | 2 Ω | JEDEC-95代码: | DO-213AB |
JESD-30 代码: | O-LELF-R2 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 1.25 W |
认证状态: | Not Qualified | 标称参考电压: | 5.6 V |
子类别: | Voltage Reference Diodes | 表面贴装: | YES |
技术: | ZENER | 端子面层: | TIN LEAD |
端子形式: | WRAP AROUND | 端子位置: | END |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 最大电压容差: | 20% |
工作测试电流: | 66.9 mA | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5919BUR-1ATR | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 10%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GL | |
1N5919BUR-1B | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5919BUR-1BTR | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5919BUR-1C | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5919BUR-1CTR | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 2%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5919BUR-1D | MICROSEMI |
获取价格 |
暂无描述 | |
1N5919BUR-1DTR | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 1%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GLA | |
1N5919BUR-1E3 | MICROSEMI |
获取价格 |
Zener Diode | |
1N5919BUR-1TR | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 20%, 1.25W, Silicon, Unidirectional, DO-213AB, HERMETIC SEALED, GL | |
1N5919C | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 2%, 1.5W, Silicon, Unidirectional, DO-41 |