5秒后页面跳转
1N5821-T3-LF PDF预览

1N5821-T3-LF

更新时间: 2024-01-21 11:05:51
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管肖特基二极管
页数 文件大小 规格书
1页 122K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2

1N5821-T3-LF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.06
其他特性:FREE WHEELING DIODE应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:2
最大非重复峰值正向电流:80 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260最大重复峰值反向电压:30 V
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5821-T3-LF 数据手册

  
Data Sheet  
3.0 Amp BARRIER  
SCHOTTKY RECTIFIERS  
MechanicalDimensions  
Description  
JEDEC  
D0-201AD  
.285  
.375  
1.00 Min.  
.050 typ.  
.190  
.210  
Features  
n LOW STORED CHARGE; MAJORITY  
CARRIERCONDUCTION  
n EXTREMELYLOWVF  
n LOW POWER LOSS — HIGH EFFICIENCY  
n MEETSULSPECIFICATION 94V-0  
Electrical Characteristics @ 25OC.  
IN5820, 21 & 22 Series  
Units  
Maximum Ratings  
IN5820  
20  
20  
IN5821  
30  
30  
IN5822  
40  
40  
Peak Repetitive Reverse Voltage...VRRM  
Working Peak Reverse Voltage...VRWM  
DC Blocking Voltage...VDC  
Volts  
Volts  
Volts  
Volts  
20  
30  
40  
14  
21  
28  
RMS Reverse Voltage...VR(rms)  
Average Forward Rectified Current...IF(av)  
Amps  
Amps  
Volts  
............................................. 3.0 ...............................................  
............................................. 80 ...............................................  
@ TA = 55°C  
Non-Repetitive Peak Forward Surge Current...IFSM  
@ Rated Load Conditions, ½ Wave, 60 HZ, TL = 75°C  
Forward Voltage...V  
@ IF = 3.0 AmpsF  
.475  
.500  
.525  
DC Reverse Current...I  
@ Rated DC BlockinRg Voltage  
T = 25°C  
TLL = 100°C  
mAmps  
mAmps  
............................................. 2.0 ...............................................  
............................................. 10 ...............................................  
............................................. 250 ...............................................  
....................................... -65 to 125 ............................................  
Typical Junction Capacitance...CJ  
pF  
Operating & Storage Temperature Range...TJ, TSTRG  
°C  
Forward Current Derating Curve  
Typical Junction Capacitance  
Typical Reverse Characteristics  
Lead Temperature (oC)  
Reverse Voltage (VR) - Volts  
Percent of Rated Peak Voltage  
NOTES: 1. Measured @ 1 MHZ and applied reverse voltage of 4.0V.  
2. Thermal Resistance Junction to Ambient, Jedec Method.  
3. When Mounted to heat sink, from body.  
Page 7-7  

与1N5821-T3-LF相关器件

型号 品牌 描述 获取价格 数据表
1N5821-TB WTE 3.0A SCHOTTKY BARRIER RECTIFIER

获取价格

1N5821-TB ONSEMI 3.0A SCHOTTKY BARRIER DIODE

获取价格

1N5821-TB-LF WTE Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD, ROHS COM

获取价格

1N5821-TP MCC 3 Amp Schottky Barrier Rectifier 20 - 40 Volts

获取价格

1N5821-TP-HF MCC Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD,

获取价格

1N5821TR CENTRAL Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 30V V(RRM), Silicon, DO-201AD,

获取价格