VS-1N5820, VS-1N5820-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 3.0 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
Cathode
Anode
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
C-16
• Guard ring for enhanced ruggedness and long
term reliability
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
PRODUCT SUMMARY
Package
DO-201AD (C-16)
3 A
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
IF(AV)
VR
20 V
VF at IF
See Electrical table
20 mA at 100 °C
150 °C
DESCRIPTION
I
RM max.
The VS-1N5820... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
TJ max.
Diode variation
EAS
Single die
See Electrical table
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
3.0
UNITS
Rectangular waveform
A
V
20
tp = 5 μs sine
3 Apk, TJ = 25 °C
Range
450
A
VF
0.475
- 65 to 150
V
TJ
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-1N5820
VS-1N5820-M3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
20
20
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
50 % duty cycle at TL = 114 °C, rectangular waveform
With cooling fins
Maximum average forward current
IF(AV)
3.0
A
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
450
90
Followinganyratedload
condition and with rated
Maximum peak one cycle
non-repetitive surge current at TJ = 25 °C
IFSM
VRRM applied
Revision: 11-Oct-11
Document Number: 93257
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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