Datasheet > 1N5820THRU1N5822

1N5820THRU1N5822

更新时间： 2024-11-28 22:08:23

品牌	Logo	应用领域
商朗 - LUNSURE		/
页数	文件大小	规格书
2页	171K
描述
SCHOTTKY BARRIER RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5820THRU1N5822 数据手册

1N5820 THRU 1N5822

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 40 Volts

Forward Current - 3.0Ampere

CHENYI ELECTRONICS

FEATURES

. Plastic package has Underwriters Laboratory Flammability Classification 94V-0

. Metal sliicon junction ,majority carriet conduction

. Guard ring for overcoltage protection

. Low power loss,high efficiency

. High current capability ,Low forward voltage drop

. High surge capability

. For use in low voltage ,high frequency inverters,

free wheeling , and polarilty protection applications

. High temperature soldering guaranteed: 250 /10 seconds at terminals,

0.375"(9.5mm)lead length,5lbs.(2.3kg)tension

MECHANICAL DATA

. Case: JEDEC DO-201AD molded plastic body

. Terminals: Solder plated,solderable per MIL-STD-750,method 2026

. Polarity: coler band denotes cathode end

. Mounting Position: Any

. Weight: 0.0041 ounce, 1.15 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Ratings at 25 ambient temperature unless otherwise specified,Single phase,half wave,resistive or inductive)

load. For capacitive load,derate by 20%)

Symbols 1N5820 1N5821 1N5822

Units

Volts

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VRRM

VRMS

VDC

Maximum DC blocking voltage

Maximum non-repetitive peak reverse voltage

Macimum average forward rectified

current 0.375"(9.5mm)lead length at TL=90

Peak forward surge current 8.3ms singel half

sine-wave superimposed on rated load

VRSM

I(AV)

IFSM

3.0

Amp

80.0

Amps

(JEDEC method) at TL=75

)

Maximum instantaneous forward voltage at 1.0 A(Note 1)

Maximum instantaneous forward voltage at 3.1 A(Note 1)

0.475

0.850

0.500

0.525

0.950

Volts

0.900

1.5

Maximum instantaneous reverse

TA=25

20.0

40.0

current at rated DC blocking voltage(Note 1)

TA=100

Typeical thermal resistance(Note 2)

10.0

-65 to +125

Operating junction and storage temperature range

TJ/TSTG

Notes: 1. Pulse test: 300

pulse width,1% duty cycle

2.Thermal resistance (from junction to ambient)Vertical P.C.B. Mounted,0.500"(12.7mm)lead

length with 2.5X2.5(63.5X63.5mm)copper pads

Page 1 of 2

中文翻译

下载PDF

与1N5820THRU1N5822相关器件

型号	品牌	获取价格	描述	数据表
1N5820-TP	MCC	获取价格	3 Amp Schottky Barrier Rectifier 20 - 40 Volts
1N5820-TP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820TR	VISHAY	获取价格	Schottky Rectifier, 3.0 A
1N5820TRLEADFREE	CENTRAL	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820TR-M3	VISHAY	获取价格	Schottky Rectifier, 3.0 A
1N5820TRPBF	INFINEON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, LEAD FREE, PLASTIC
1N5820U22	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820U23	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820U26	RECTRON	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD,
1N5820US	MICROSEMI	获取价格	3 AMP SCHOTTKY BARRIER RECTIFIERS

与1N5820THRU1N5822相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

63

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5820THRU1N5822

1N5820THRU1N5822 数据手册

与1N5820THRU1N5822相关器件

与1N5820THRU1N5822相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5820THRU1N5822

1N5820THRU1N5822 数据手册

与1N5820THRU1N5822相关器件

与1N5820THRU1N5822相关文章

您还可以找

您在本页遇到什么问题？