Datasheet > 1N581X

1N581X

更新时间： 2022-11-28 04:41:41

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
5页	59K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

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数据手册

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1N581X 数据手册

1N581x

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCTS CHARACTERISTICS

I_F(AV)

V_RRM

T_j

1 A

40 V

150°C

0.45 V

V_F(max)

FEATURES AND BENEFITS

VERY SMALL CONDUCTION LOSSES

NEGLIGIBLE SWITCHING LOSSES

EXTREMELY FAST SWITCHING

LOW FORWARD VOLTAGE DROP

AVALANCHE CAPABILITY SPECIFIED

DO41

DESCRIPTION

Axial Power Schottky rectifier suited for Switch

Mode Power Supplies and high frequency DC to

DC converters. Packaged in DO41 these devices

are intended for use in low voltage, high frequency

inverters, free wheeling, polarity protection and

small battery chargers.

ABSOLUTE RATINGS (limiting values)

Value

Symbol

Parameter

Unit

1N5817 1N5818 1N5819

V_RRM

I_F(RMS)

I_F(AV)

Repetitive peak reverse voltage

RMS forward current

Average forward current

T_L= 125°C

δ = 0.5

I_FSM

Surge non repetitive forward

current

tp = 10 ms

Sinusoidal

P_ARM

1200

900

Repetitive peak avalanche

power

tp = 1µs Tj = 25°C

T_stg

- 65 to + 150

150

°C

Storage temperature range

Maximum operating junction temperature *

Critical rate of rise of reverse voltage

dV/dt

10000

V/µs

dPtot

* :

thermal runaway condition for a diode on its own heatsink

dTj

Rth(j − a)

July 2003 - Ed: 4A

1/5

12 3 4 5

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