1N5711

更新时间： 2024-09-28 22:34:59

品牌	Logo	应用领域
美台 - DIODES		二极管开关
页数	文件大小	规格书
2页	52K
描述
SCHOTTKY BARRIER SWITCHING DIODE

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中文翻译

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数据手册

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1N5711 数据手册

1N5711

SCHOTTKY BARRIER SWITCHING DIODE

Features

Ultra-Fast Switching Speed

High Reverse Breakdown Voltage

Low Forward Voltage Drop

Guard Ring Junction Protection

Mechanical Data

DO-35

Min

25.40

Case: DO-35, Glass

Dim

Max

Leads: Solderable per MIL-STD-202,

Method 208

4.00

0.60

2.00

Marking: Type Number

Polarity: Cathode Band

Weight: 0.13 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

1N5711

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

V_R(RMS)

I_FM

RMS Reverse Voltage

°C/W

°C

Forward Continuous Current

P_d

Power Dissipation (Note 1)

400

R_qJA

T_j

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating Temperature Range

Storage Temperature Range

300

-55 to +125

-55 to +150

T_STG

°C

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Reverse Breakdown Voltage (Note 2)

Reverse Leakage Current (Note 2)

Symbol

V_(BR)R

I_R

Min

Max

Unit

Test Condition

_R= 10mA

V_R= 50V

200

I_F= 1.0mA

I_F= 15mA

0.41

1.00

V_F

C_j

t_rr

Forward Voltage Drop (Note 2)

Junction Capacitance

V_R= 0V, f = 1.0MHz

2.0

1.0

I_F= I_R= 5.0mA,

I_rr= 0.1 x I_R, R_L= 100W

Reverse Recovery Time

Notes:

1. Valid provided that leads are kept at ambient temperature.

2. Short duration test pulse used to minimize self-heating effect.

DS11011 Rev. F-2

1 of 2

1N5711

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1N5711-13	DIODES	获取价格	Rectifier Diode, Schottky, 1 Element, 0.015A, 70V V(RRM), Silicon, DO-35
1N5711-1E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 0.033A, 50V V(RRM), Silicon, DO-204AH, ROHS COMPLIAN
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