是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | O-MALF-W2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.25 | Is Samacsys: | N |
其他特性: | LOW IMPEDANCE | 最大击穿电压: | 126 V |
最小击穿电压: | 114 V | 击穿电压标称值: | 120 V |
外壳连接: | ISOLATED | 最大钳位电压: | 165 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-13 |
JESD-30 代码: | O-MALF-W2 | JESD-609代码: | e0 |
最大非重复峰值反向功率耗散: | 1500 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | LONG FORM |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 1 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 102 V |
子类别: | Transient Suppressors | 表面贴装: | NO |
技术: | AVALANCHE | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
1N5659 | MICROSEMI |
类似代替 |
TRANSIENT ABSORPTION ZENER | |
1N5659A | MICROSEMI |
功能相似 |
TRANSIENT ABSORPTION ZENER |
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