品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 电视 | |
页数 | 文件大小 | 规格书 |
1页 | 56K | |
描述 | ||
1500W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13, METAL PACKAGE-2 |
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | METAL PACKAGE-2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.34 | 最大击穿电压: | 137 V |
最小击穿电压: | 124 V | 击穿电压标称值: | 130 V |
最大钳位电压: | 179 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-13 | JESD-30 代码: | O-MALF-W2 |
JESD-609代码: | e0 | 最大非重复峰值反向功率耗散: | 1500 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | LONG FORM |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 5 W |
最大重复峰值反向电压: | 111 V | 子类别: | Transient Suppressors |
表面贴装: | NO | 技术: | AVALANCHE |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | WIRE |
端子位置: | AXIAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5660ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
1N5660B | CRYDOM |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 105V V(RWM), Unidirectional, 1 Element, Silicon | |
1N5660COX.160 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 111V V(RWM), Unidirectional, 1 Element, Silicon, | |
1N5660COX.200 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 111V V(RWM), Unidirectional, 1 Element, Silicon, | |
1N5660COX.250 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 111V V(RWM), Unidirectional, 1 Element, Silicon, | |
1N5661 | PROTEC |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 121V V(RWM), Unidirectional, 1 Element, Silicon | |
1N5661 | MICROSEMI |
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TRANSIENT ABSORPTION ZENER | |
1N5661 | LITTELFUSE |
获取价格 |
Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors | |
1N5661 | NJSEMI |
获取价格 |
Diode TVS Single Uni-Dir 121V 1.5KW 2-Pin DO-13 | |
1N5661 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 121V V(RWM), Unidirectional, 1 Element, Silicon, HE |