1N5615US thru 1N5623US
SURFACE MOUNT VOIDLESS-
HERMETICALLY SEALED FAST
RECOVERY GLASS RECTIFIERS
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “fast recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/429 and is ideal for high-reliability applications where a failure cannot
be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak
reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
also available in axial-leaded package configurations for thru-hole mounting (see
separate data sheet for 1N5615 thru 1N5623). Microsemi also offers numerous
other rectifier products to meet higher and lower current ratings with various
recovery time speed requirements including fast and ultrafast device types in both
through-hole and surface mount packages.
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
•
Surface mount package series equivalent to the
JEDEC registered 1N5615 to 1N5623 series
•
•
•
Fast recovery 1 Amp rectifiers 200 to 1000 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
•
•
•
•
•
Voidless hermetically sealed glass package
Triple-Layer Passivation
•
•
•
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 200 to 1000 Volts.
Low thermal resistance
JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/429
•
Controlled avalanche with peak reverse power
capability
•
Axial-leaded equivalents also available (see separate
data sheet for 1N5615 thru 1N5623)
•
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
•
•
•
•
Junction & Storage Temperature: -65oC to +175oC
Thermal Resistance: 13oC/W junction to end cap
Thermal Impedance: 4.5oC/W @ 10 ms heating time
•
•
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are Copper with
Tin/Lead (Sn/Pb) finish. Note: Previous inventory
had solid Silver end caps with Tin/Lead (Sn/Pb) finish.
Average Rectified Forward Current (IO): 1.0 Amps @
TA = 55ºC
•
•
•
•
MARKING & POLARITY: Cathode band only
TAPE & REEL option: Standard per EIA-481-B
WEIGHT: 193 mg
•
•
Forward Surge Current: 30 Amps @ 8.3 ms half-sine
Solder Temperatures: 260ºC for 10 s (maximum)
See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
WORKING
PEAK
MINIMUM
BREAKDOWN
VOLTAGE
AVERAGE
RECTIFIED
CURRENT
IO @ TA
FORWAR
D
VOLTAGE
(MAX.)
VF @ 3A
REVERSE
CURRENT
(MAX.)
CAPACITANCE MAXIMUM
REVERSE
RECOVERY
(MAX.)
(NOTE 3)
trr
(MAX.)
C @ VR =12 V
f=1 MHz
SURGE
CURRENT
IFSM
REVERSE
VOLTAGE
VRWM
TYPE
V
BR @ 50μA
IR @ VRWM
(NOTE 1)
(NOTE 2)
AMPS
VOLTS
VOLTS
AMPS
VOLTS
pF
ns
μA
50oC
1.00
1.00
1.00
1.00
1.00
100oC
25oC 100oC
1N5615US
1N5617US
1N5619US
1N5621US
1N5623US
200
400
600
800
1000
220
440
660
880
1100
.750
.750
.750
.750
.750
.8 MIN.
.5
.5
.5
.5
.5
25
25
25
25
25
45
35
25
20
15
25
25
25
25
25
150
150
250
300
500
1.6
MAX.
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.
NOTE 2: TA = 100 oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250 A
Copyright © 2009
10-06-2009 REV E; SD47A.pdf
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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