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1N5615USTR PDF预览

1N5615USTR

更新时间： 2024-11-09 13:03:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 整流二极管快速恢复二极管
页数 文件大小 规格书
3页 175K
描述
1N5615USTR

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中文翻译

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1N5615USTR 技术参数

生命周期：Active包装说明：O-LELF-R2
Reach Compliance Code：compliant风险等级：5.76
其他特性：HIGH RELIABILITY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：O-LELF-R2
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：1 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
最大重复峰值反向电压：200 V最大反向恢复时间：0.15 µs
表面贴装：YES技术：AVALANCHE
端子形式：WRAP AROUND端子位置：END
Base Number Matches：1

1N5615USTR 数据手册

 浏览型号1N5615USTR的Datasheet PDF文件第2页浏览型号1N5615USTR的Datasheet PDF文件第3页 
1N5615 thru 1N5623  
VOIDLESS-HERMETICALLY SEALED  
FAST RECOVERY GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/429  
and is ideal for high-reliability applications where a failure cannot be tolerated.  
These industry-recognized 1.0 Amp rated rectifiers for working peak reverse  
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass  
construction using an internal “Category I” metallurgical bond. These devices are  
also available in surface mount MELF package configurations by adding a “US”  
suffix (see separate data sheet for 1N5615US thru 1N5623US). Microsemi also  
offers numerous other rectifier products to meet higher and lower current ratings  
with various recovery time speed requirements including fast and ultrafast device  
types in both through-hole and surface mount packages.  
“A” Package  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Popular JEDEC registered 1N5615 to 1N5623 series  
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
•
•
•
Fast recovery 1 Amp rectifiers 200 to 1000 V  
Military and other high-reliability applications  
General rectifier applications including bridges, half-  
bridges, catch diodes, etc.  
High forward surge current capability  
Extremely robust construction  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 200 to 1000 Volts.  
•
•
•
JAN, JANTX, JANTXV, and JANS available per MIL-  
PRF-19500/429  
Low thermal resistance  
•
Controlled avalanche with peak reverse power  
capability  
•
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix (see  
separate data sheet for 1N5615US thru 1N5623US)  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Junction & Storage Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass with  
Tungsten slugs (package dimensions on last page)  
Thermal Resistance: 38oC/W junction to lead at 3/8  
inch (10 mm) lead length from body  
Thermal Impedance: 4.5oC/W @ 10 ms heating time  
TERMINATIONS: Axial leads are copper with  
Tin/Lead (Sn/Pb) finish. Note: Previous inventory  
had solid Silver axial-leads and no finish.  
•
•
Average Rectified Forward Current (IO): 1.0 Amps @  
TA = 55ºC  
•
•
•
•
MARKING: Body paint and part number, etc.  
POLARITY: Cathode band  
•
•
Forward Surge Current: 30 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
TAPE & REEL option: Standard per EIA-296  
WEIGHT: 340 mg  
ELECTRICAL CHARACTERISTICS  
WORKING  
PEAK  
MINIMUM  
BREAKDOWN  
VOLTAGE  
AVERAGE  
RECTIFIED  
CURRENT  
IO @ TA  
FORWAR  
D
VOLTAGE  
(MAX.)  
VF @ 3A  
REVERSE  
CURRENT  
(MAX.)  
CAPACITANCE MAXIMUM  
REVERSE  
RECOVERY  
(MAX.)  
(NOTE 3)  
trr  
(MAX.)  
C @ VR =12 V  
f=1 MHz  
SURGE  
CURRENT  
IFSM  
REVERSE  
VOLTAGE  
VRWM  
TYPE  
VBR @ 50μA  
IR @ VRWM  
(NOTE 1)  
(NOTE 2)  
AMPS  
VOLTS  
VOLTS  
AMPS  
VOLTS  
pF  
ns  
μA  
50oC 100oC  
25oC 100oC  
1N5615  
1N5617  
1N5619  
1N5621  
1N5623  
200  
400  
600  
800  
1000  
220  
440  
660  
880  
1100  
1.00  
1.00  
1.00  
1.00  
1.00  
.750  
.750  
.750  
.750  
.750  
.8 MIN.  
.5  
.5  
.5  
.5  
.5  
25  
25  
25  
25  
25  
45  
35  
25  
20  
15  
25  
25  
25  
25  
25  
150  
150  
250  
300  
500  
1.6  
MAX.  
NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,  
derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal  
resistance from mounting point to ambient is sufficiently controlled where TJ(max) does not exceed 175 oC.  
NOTE 2: TA = 100 oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals  
NOTE 3: IF = 0.5 A, IRM = 1 A, IR(REC) = 0.250 A  
Copyright © 2007  
1-15-2007 REV D  
Microsemi  
Scottsdale Division  
Page 1  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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