是否Rohs认证: | 不符合 | 生命周期: | Active |
零件包装代码: | DO-213AA | 包装说明: | R-LELF-R2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.18 | 其他特性: | METALLURGICALLY BONDED |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | ZENER DIODE |
最大动态阻抗: | 30 Ω | JEDEC-95代码: | DO-213AA |
JESD-30 代码: | R-LELF-R2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 200 °C | 封装主体材料: | GLASS |
封装形状: | RECTANGULAR | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | UNIDIRECTIONAL |
最大功率耗散: | 0.5 W | 认证状态: | Not Qualified |
标称参考电压: | 5.6 V | 子类别: | Voltage Reference Diodes |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | TIN LEAD | 端子形式: | WRAP AROUND |
端子位置: | END | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
最大电压容差: | 2% | 工作测试电流: | 3 mA |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5524CUR-1E3TR | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 2%, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL | |
1N5524CURE3 | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 2%, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL | |
1N5524CURE3TR | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 2%, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL | |
1N5524CURTR | MICROSEMI |
获取价格 |
Zener Diode, 5.6V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLAS | |
1N5524CURTR-1 | MICROSEMI |
获取价格 |
Low Voltage Surface Mount 500 mW Avalanche Diodes | |
1N5524D | MICROSEMI |
获取价格 |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW | |
1N5524D | GOOD-ARK |
获取价格 |
0.4W LOW VOLTAGE AVALANCHE DIODES | |
1N5524D | CENTRAL |
获取价格 |
Zener Diode, 5.6V V(Z), 1%, 0.4W, Silicon, Unidirectional, DO-35, | |
1N5524D | CDI-DIODE |
获取价格 |
Zener Diode, 5.6V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS P | |
1N5524D | NJSEMI |
获取价格 |
Diode Zener Single 5.6V 1% 400mW 2-Pin DO-35 |