Datasheet > 1N5524CUR-1E3TR

1N5524CUR-1E3TR

更新时间： 2024-11-09 17:50:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网测试二极管
页数	文件大小	规格书
3页	132K
描述
Zener Diode, 5.6V V(Z), 2%, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL34, MELF-2

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N5524CUR-1E3TR 技术参数

生命周期：	Active	包装说明：	R-LELF-R2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.6
其他特性：	METALLURGICALLY BONDED	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JEDEC-95代码：	DO-213AA
JESD-30 代码：	R-LELF-R2	元件数量：	1
端子数量：	2	封装主体材料：	GLASS
封装形状：	RECTANGULAR	封装形式：	LONG FORM
极性：	UNIDIRECTIONAL	标称参考电压：	5.6 V
表面贴装：	YES	技术：	AVALANCHE
端子形式：	WRAP AROUND	端子位置：	END
最大电压容差：	2%	工作测试电流：	3 mA
Base Number Matches：	1

1N5524CUR-1E3TR 数据手册

IN5518BUR-1 thru 1N5546BUR-1

(or MLL5518B-1 thru MLL5546B-1)

Low Voltage Surface Mount

500 mW Avalanche Diodes

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface

mount Zener voltage regulators provides a selection from 3.3 to 33 volts in

standard 5% tolerances as well as tighter tolerances identified by different

suffix letters on the part number. These have an internal-metallurgical-bond

option as identified by the “–1” suffix. This internally bonded Zener package

construction is also in JAN, JANTX, and JANTXV military qualifications.

Microsemi also offers numerous other Zener products to meet higher and

lower power applications.

DO-213AA

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Surface mount equivalent to JEDEC registered

1N5518 thru 1N5546 series

•

Regulates voltage over a broad operating current

and temperature range

•

Internal metallurgical bond with the “-1” suffix

•

Extensive selection from 3.3 to 33 V

Also available in JAN, JANTX, and JANTXV

qualifications per MIL-PRF-19500/437 by adding

the JAN, JANTX, or JANTXV prefixes to part

numbers for desired level of screening; (e.g.

JANTX1N4099UR-1, JANTXV1N4109CUR-1, etc.)

Standard voltage tolerances are plus/minus 5% with

a “B” suffix, e.g. 1N5518BUR-1, etc.

•

Tight tolerances available in plus or minus 2% or 1%

with C or D suffix respectively, e.g. 1N5518CUR-1,

1N5518DUR-1, etc.

•

Nonbonded types also available without the “-1”

suffix for both the axial and surface mount

packages

•

Hermetically sealed surface mount package

Nonsensitive to ESD per MIL-STD-750 Method 1020

Minimal capacitance (see Figure 3)

DO-7 or DO-35 glass body axial-leaded Zener

equivalents also available per JEDEC registration

with part numbers 1N5518 thru 1N5546 on

separate data sheets

Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Operating and Storage temperature: -65^ºC to

•

CASE: Hermetically sealed glass DO-213AA

(SOD80 or MLL34) MELF style package

+175^ºC

Thermal Resistance: 100 ^ºC/W junction to end cap,

or 250^ºC/W junction to ambient when mounted on

FR4 PC board (1 oz Cu) with recommended

footprint (see last page)

TERMINALS: End caps tin-lead plated solderable

per MIL-STD-750, method 2026

POLARITY: Cathode indicated by band where

diode is to be operated with the banded end positive

with respect to the opposite end for Zener regulation

•

Steady-State Power: 0.5 watts at end cap

temperature T_EC< 125^oC or at ambient T_A< 50^ºC

when mounted on FR4 PC board as described for

thermal resistance above (see Figure 2 for

derating)

•

MARKING: cathode band only

TAPE & REEL option: Standard per EIA-481-1-A

with 12 mm tape, 2000 per 7 inch reel or 5000 per

13 inch reel (add “TR” suffix to part number)

•

Forward voltage @200 mA: 1.1 volts

Solder Temperatures: 260 ^ºC for 10 s (max)

•

WEIGHT: 0.04 grams

See package dimensions on last page

10-31-2003 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

下载PDF

与1N5524CUR-1E3TR相关器件

型号	品牌	获取价格	描述	数据表
1N5524CURE3	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 2%, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL
1N5524CURE3TR	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 2%, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL
1N5524CURTR	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLAS
1N5524CURTR-1	MICROSEMI	获取价格	Low Voltage Surface Mount 500 mW Avalanche Diodes
1N5524D	MICROSEMI	获取价格	LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW
1N5524D	GOOD-ARK	获取价格	0.4W LOW VOLTAGE AVALANCHE DIODES
1N5524D	CENTRAL	获取价格	Zener Diode, 5.6V V(Z), 1%, 0.4W, Silicon, Unidirectional, DO-35,
1N5524D	CDI-DIODE	获取价格	Zener Diode, 5.6V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS P
1N5524D	NJSEMI	获取价格	Diode Zener Single 5.6V 1% 400mW 2-Pin DO-35
1N5524D-1	MICROSEMI	获取价格	Low Voltage Surface Mount 500 mW Avalanche Diodes

与1N5524CUR-1E3TR相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5524CUR-1E3TR

1N5524CUR-1E3TR 技术参数

1N5524CUR-1E3TR 数据手册

与1N5524CUR-1E3TR相关器件

与1N5524CUR-1E3TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5524CUR-1E3TR

1N5524CUR-1E3TR 技术参数

1N5524CUR-1E3TR 数据手册

与1N5524CUR-1E3TR相关器件

与1N5524CUR-1E3TR相关文章

您还可以找

您在本页遇到什么问题？