生命周期: | Transferred | 包装说明: | O-LELF-R2 |
Reach Compliance Code: | unknown | 风险等级: | 5.62 |
Is Samacsys: | N | 其他特性: | METALLURGICALLY BONDED |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | ZENER DIODE |
JEDEC-95代码: | DO-213AA | JESD-30 代码: | O-LELF-R2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 125 °C |
最低工作温度: | -65 °C | 封装主体材料: | GLASS |
封装形状: | ROUND | 封装形式: | LONG FORM |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 0.5 W |
认证状态: | Not Qualified | 标称参考电压: | 3.3 V |
最大反向电流: | 5 µA | 表面贴装: | YES |
技术: | ZENER | 端子面层: | TIN LEAD |
端子形式: | WRAP AROUND | 端子位置: | END |
最大电压容差: | 5% | 工作测试电流: | 20 mA |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N5518BUR-1E3 | MICROSEMI |
获取价格 |
Zener Diode, 3.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, ROHS COMPLIANT, HERME |
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1N5518BUR-1TR | MICROSEMI |
获取价格 |
暂无描述 |
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1N5518BURTR | MICROSEMI |
获取价格 |
Zener Diode, 3.3V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLAS |
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1N5518BURTR-1 | MICROSEMI |
获取价格 |
Low Voltage Surface Mount 500 mW Avalanche Diodes |
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1N5518C | MICROSEMI |
获取价格 |
LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
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1N5518C | GOOD-ARK |
获取价格 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
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1N5518C | NJSEMI |
获取价格 |
Diode Zener Single 3.3V 2% 400mW 2-Pin DO-35 |
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1N5518C | CENTRAL |
获取价格 |
3.3V,400mW Through-Hole Diode-Zener Single: Low Level Tight Tolerance |
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1N5518C-1 | MICROSEMI |
获取价格 |
Low Voltage Surface Mount 500 mW Avalanche Diodes |
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1N5518C-1E3 | MICROSEMI |
获取价格 |
Zener Diode, 3.3V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-35, DO-7, 2 PIN |
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