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1N5518BUR-1TR PDF预览

1N5518BUR-1TR

更新时间: 2024-01-12 10:03:03
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美高森美 - MICROSEMI 二极管齐纳二极管测试
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1N5518BUR-1TR 数据手册

 浏览型号1N5518BUR-1TR的Datasheet PDF文件第2页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
ZENER DIODE, 500mW  
– LEADLESS PACKAGE FOR SURFACE MOUNT  
– LOW REVERSE LEAKAGE CHARACTERISTICS  
– METALLURGICALLY BONDED  
Qualified per MIL-PRF-19500/437  
DEVICES  
QUALIFIED LEVELS  
JAN  
JANTX  
1N5518BUR-1 Thru 1N5546BUR-1  
And  
JANTXV  
CDLL5518 Thru CDLL5546D  
MAXIMUM RATING AT 25°C  
Junction and Storage Temperature:  
DC Power Dissipation:  
Power Derating:  
-65°C to +175°C  
500mW @ TEC = +125°C  
10mW / °C above TEC = +125°C  
1.1 volts maximum  
Forward Voltage @ 200mA:  
D
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)  
MAX. ZENER  
IMPEDANCE  
B-C-D  
B-C-D  
NOMINAL  
ZENER  
VOLTAGE  
ZENER  
TEST  
CURRENT  
REGULATION  
FACTOR  
CURRENT  
LOW  
VZ  
CURRENT  
MAXIMUM REVERSE LEAKAGE  
CURRENT  
SUFFIX  
MAIMUM  
DC ZENER  
G1  
F
G
TYPE  
NUMBER  
SUFFIX  
VZ @ IZT  
(NOTE 2)  
ZZT @ IZT  
(NOTE 3)  
IR  
ΔVZ  
(NOTE 5)  
IZT  
VR = VOLTS  
IZM  
IZL  
(NOTE 4)  
(NOTE 1)  
NON &  
A-  
SUFFIX  
B-C-D-  
SUFFIX  
VOLTS  
mA  
Ohms  
mA  
VOLTS  
mA  
μAdc  
S
CDLL5518B  
CDLL5519B  
CDLL5520B  
CDLL5521B  
CDLL5522B  
3.3  
3.6  
3.9  
4.3  
4.7  
20  
20  
20  
20  
10  
26  
24  
22  
18  
22  
5.0  
3.0  
1.0  
3.0  
2.0  
0.90  
0.90  
0.90  
1.0  
1.0  
1.0  
1.0  
1.5  
2.0  
115  
105  
98  
88  
81  
0.90  
0.90  
0.85  
0.75  
0.60  
2.0  
2.0  
2.0  
2.0  
1.0  
MILLIMETERS  
INCHES  
1.5  
CDLL5523B  
CDLL5524B  
CDLL5525B  
CDLL5526B  
CDLL5527B  
5.1  
5.6  
6.2  
6.8  
7.5  
5.0  
3.0  
1.0  
1.0  
1.0  
26  
30  
30  
30  
35  
2.0  
2.0  
1.0  
1.0  
0.5  
2.0  
3.0  
4.5  
5.5  
6.0  
2.5  
3.5  
5.0  
6.2  
6.8  
75  
68  
61  
56  
51  
0.65  
0.30  
0.20  
0.10  
0.05  
0.25  
0.25  
0.01  
0.01  
0.01  
DIM  
MIN  
MAX  
MIN  
MAX  
D
F
1.60  
0.41  
3.30  
1.70  
0.55  
3.70  
0.063  
0.016  
.130  
0.067  
0.022  
.146  
CDLL5528B  
CDLL5529B  
CDLL5530B  
CDLL5531B  
CDLL5532B  
8.2  
9.1  
10.0  
11.0  
12.0  
1.0  
1.0  
1.0  
1.0  
1.0  
40  
45  
60  
80  
90  
0.5  
0.1  
0.05  
0.05  
0.05  
6.5  
7.0  
8.0  
9.0  
9.5  
7.5  
8.2  
9.1  
9.9  
10.8  
46  
42  
38  
35  
32  
0.05  
0.05  
0.10  
0.20  
0.20  
0.01  
0.01  
0.01  
0.01  
0.01  
G
G1  
S
2.54 REF.  
0.03 MIN  
.100 REF.  
.001 MIN  
CDLL5533B  
CDLL5534B  
CDLL5535B  
CDLL5536B  
CDLL5537B  
13.0  
14.0  
15.0  
16.0  
17.0  
1.0  
1.0  
1.0  
1.0  
1.0  
90  
0.01  
0.01  
0.01  
0.01  
0.01  
10.5  
11.5  
12.5  
13.0  
14.0  
11.7  
12.6  
13.5  
14.4  
15.3  
29  
27  
25  
24  
22  
0.20  
0.20  
0.20  
0.20  
0.20  
0.01  
0.01  
0.01  
0.01  
0.01  
100  
100  
100  
100  
FIGURE 1  
CDLL5538B  
CDLL5539B  
CDLL5540B  
CDLL5541B  
CDLL5542B  
18.0  
19.0  
20.0  
22.0  
24.0  
1.0  
1.0  
1.0  
1.0  
1.0  
100  
100  
100  
100  
100  
0.01  
0.01  
0.01  
0.01  
0.01  
15.0  
16.0  
17.0  
18.0  
20.0  
16.2  
17.1  
18.0  
19.8  
21.6  
21  
20  
19  
17  
16  
0.20  
0.20  
0.20  
0.25  
0.30  
0.01  
0.01  
0.01  
0.01  
0.01  
DESIGN DATA  
CASE: DO-213AA, Hermetically sealed glass case.  
0.01  
0.01  
0.01  
0.01  
0.01  
(MELF, SOD-80, LL34)  
CDLL5543B  
CDLL5544B  
CDLL5545B  
CDLL5546B  
25.0  
28.0  
30.0  
33.0  
1.0  
1.0  
1.0  
1.0  
100  
100  
100  
100  
0.01  
0.01  
0.01  
0.01  
21.0  
23.0  
24.0  
28.0  
22.4  
25.2  
27.0  
29.7  
15  
14  
13  
12  
0.35  
0.40  
0.45  
0.50  
LEAD FINISH: Tin / Lead  
THERMAL RESISTANCE: (R  
100 °C/W maximum at L = 0 inch  
):  
θJEC  
NOTE 1: No Suffix type numbers are ±20% with guaranteed limits for only VZ, IR, and VF. Units with “A”  
suffix are ±10% with guaranteed limits for VZ, IR, and VF. Units with guaranteed limits for all six  
parameters are indicated by a “B” suffix for ±5.0% units, “C” suffix for ±2.0% and “D” suffix for  
±1.0%.  
THERMAL IMPEDANCE: (Z ):  
35°C/W maximum  
θJX  
NOTE 2: Zener voltage is measured with the device junction in thermal equilibrium at an ambient  
temperature of 25°C ± 3°C.  
POLARITY: Diode to be operated with the banded  
(cathode) end positive.  
NOTE 3: Zener impedance is derived by superimposing on IZT A 60Hz rms a.c. current equal to 10% of IZT  
NOTE 4: Reverse leakage currents are measured at VR as shown on the table.  
.
MOUTING SURFACE SELECTION:  
The Axial Coefficient of Expansion (COE) of this  
device is approximately +6PPM/°C. The COE of the  
Mounting Surface System should be selected to  
provide a suitable match with this device.  
NOTE 5: ΔVZ is the maximum difference between VZ at IZT and VZ at IZL measured with the device junction  
in thermal equilibrium.  
LDS-0037 Rev. 1 (072304)  
Page 1 of 2  

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