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1N5406G PDF预览

1N5406G

更新时间: 2024-11-19 22:38:07
品牌 Logo 应用领域
EIC /
页数 文件大小 规格书
2页 20K
描述
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

1N5406G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-PALF-W2Reach Compliance Code:compliant
风险等级:5.22其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:150 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:600 V
最大反向电流:5 µA子类别:Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N5406G 数据手册

 浏览型号1N5406G的Datasheet PDF文件第2页 
GLASS PASSIVATED JUNCTION  
SILICON RECTIFIERS  
1N5400G - 1N5408G  
PRV : 50 - 1000 Volts  
Io : 3.0 Amperes  
DO - 201AD  
FEATURES :  
* Glass passivated chip  
* High current capability  
* High reliability  
1.00 (25.4)  
0.21 (5.33)  
MIN.  
0.19 (4.83)  
* Low reverse current  
* Low forward voltage drop  
0.375 (9.53)  
0.285 (7.24)  
MECHANICAL DATA :  
1.00 (25.4)  
* Case : DO-201AD Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
0.052 (1.32)  
MIN.  
0.048 (1.22)  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 1.21 grams  
Dimensions in inches and ( millimeters )  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G  
SYMBOL  
VRRM  
UNIT  
1000 Volts  
700 Volts  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
VRMS  
Maximum DC Blocking Voltage  
VDC  
100  
1000 Volts  
Maximum Average Forward Current  
0.375"(9.5mm) Lead Length Ta = 75 °C  
Peak Forward Surge Current  
IF(AV)  
3.0  
Amps.  
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
IFSM  
VF  
150  
1.0  
Amps.  
Volts  
Maximum Forward Voltage at IF = 3.0 Amps.  
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
Ta = 25 °C  
IR  
IR(H)  
CJ  
5.0  
mA  
mA  
Ta = 100 °C  
50  
50  
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Junction Temperature Range  
pF  
RqJA  
TJ  
15  
°C/W  
°C  
- 65 to + 175  
- 65 to + 175  
Storage Temperature Range  
TSTG  
°C  
Notes :  
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC  
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.  
UPDATE : MAY 27, 1998  

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