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1N5406GP PDF预览

1N5406GP

更新时间: 2024-11-08 22:38:07
品牌 Logo 应用领域
美微科 - MCC 整流二极管
页数 文件大小 规格书
3页 80K
描述
3 Amp Glass Passivated Rectifier 50 - 1000 Volts

1N5406GP 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:DO-201AD包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.08Is Samacsys:N
其他特性:METALLURGICALLY BONDED应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e0最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:600 V
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5406GP 数据手册

 浏览型号1N5406GP的Datasheet PDF文件第2页浏览型号1N5406GP的Datasheet PDF文件第3页 
M C C  
1N5400GP  
THRU  
1N5408GP  
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21201 Itasca Street Chatsworth  
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Features  
·
·
·
·
·
Low Current Leakage  
3 Amp Glass  
Passivated Rectifier  
50 - 1000 Volts  
Metalurgically Bonded Construction  
Low Forward Voltage  
High Current Capability  
Glass Passivated Junction  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Maximum Thermal Resistance; 30°C/W Junction To Lead  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
Maximum Maximum  
RMS  
DC  
Voltage  
Blocking  
Voltage  
D
1N5400GP  
1N5401GP  
1N5402GP  
1N5404GP  
1N5406GP  
1N5407GP  
1N5408GP  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
A
Cathode  
Mark  
140V  
280V  
420V  
560V  
700V  
B
D
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
3.0A  
TA = 105°C  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
INCHES  
MIN  
---  
---  
.048  
1.000  
MM  
MIN  
---  
---  
1.20  
25.40  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 3.0A;  
TJ = 25°C*  
DIM  
A
B
C
D
MAX  
.370  
.250  
.052  
---  
MAX  
9.50  
6.40  
1.30  
---  
NOTE  
5.0mA  
50mA  
TJ = 25°C  
TJ = 125°C  
Typical Junction  
Capacitance  
CJ  
40pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 300 msec, Duty cycle 1%  
www.mccsemi.com  

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