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1N5406G-B PDF预览

1N5406G-B

更新时间: 2024-11-09 03:58:11
品牌 Logo 应用领域
美台 - DIODES 整流二极管
页数 文件大小 规格书
3页 61K
描述
3.0A GLASS PASSIVATED RECTIFIER

1N5406G-B 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.06
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:125 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向电流:5 µA
最大反向恢复时间:2 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

1N5406G-B 数据手册

 浏览型号1N5406G-B的Datasheet PDF文件第2页浏览型号1N5406G-B的Datasheet PDF文件第3页 
1N5400G - 1N5408G  
3.0A GLASS PASSIVATED RECTIFIER  
Features  
·
·
·
·
Glass Passivated Die Construction  
High Current Capability and Low Forward Voltage Drop  
Surge Overload Rating to 125A Peak  
A
B
A
Lead Free Finish, RoHS Compliant (Note 4)  
Mechanical Data  
C
D
·
·
Case: DO-201AD  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
DO-201AD  
Min  
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Dim  
A
Max  
Terminals: Finish - Tin. Plated Leads Solderable per  
25.40  
7.20  
MIL-STD-202, Method 208  
e
3
B
9.50  
1.30  
5.30  
·
·
·
·
Polarity: Cathode Band  
C
1.20  
Ordering Information: See Last Page  
Marking: Type Number  
D
4.80  
Weight: 1.12 grams (approximate)  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Characteristic  
Symbol  
Unit  
5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
300  
210  
400  
500  
350  
600  
420  
800  
580  
1000  
700  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
280  
3.0  
V
A
Average Rectified Output Current  
(Note 1)  
@ TA = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms single half sine-wave superimposed on  
rated load  
IFSM  
125  
1.1  
A
Forward Voltage  
@ IF = 3.0A  
VFM  
IRM  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TA 25°C  
=
5.0  
100  
mA  
@ TA = 125°C  
trr  
CT  
Reverse Recovery Time (Note 3)  
Typical Total Capacitance (Note 2)  
2.0  
40  
ms  
pF  
RqJA  
Tj, TSTG  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
32  
°C/W  
°C  
-65 to +150  
Notes:  
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
3. Measured with I = 0.5A, I = 1.0A, I = 0.25A.  
rr  
F
R
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.  
DS29003 Rev. 6 - 2  
1 of 3  
1N5400G-1N5408G  
www.diodes.com  
ã Diodes Incorporated  

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