Datasheet > 1N5406G

1N5406G

更新时间： 2024-11-21 02:54:23

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
2页	558K
描述
GLASS PASSIVATED SILICON RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N5406G 数据手册

1N5400G THRU 1N5408G

Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Ampere

GLASS PASSIVATED SILICON RECTIFIER

DO-201AD

Features

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0



1.0 (25.4)

MIN.

Construction utilizes void-free molded plastic technique

Low reverse leakage



0.220 (5.6)

0.197(5.0)

DIA.

High forward surge current capability

High temperature soldering guaranteed:

250°C/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension

0.375(9.5)

0.285(7.2)

Mechanical Data

1.0 (25.4)

MIN.

Case : JEDEC DO-201AD Molded plastic body

Terminals : Solder plated, solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Position: Any

0.052 (1.3)

0.048 (1.2)

DIA.

Weight

: 0.04 ounce, 1.10 grams

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter

5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G

MDD MDD MDD MDD MDD MDD MDD MDD MDD

SYMBOLS

UNITS

Marking Code

5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G

50 100 200 300 400 500 600 800 1000

35 70 140 210 280 350 420 560 700

50 100 200 300 400 500 600 800 1000

V^RRM

V^RMS

V^DC

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at T^A=75°C

Peak forward surge current

I^(AV)

3.0

I^FSM

150.0

1.2

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

V^F

I^R

Maximum instantaneous forward voltage at 3.0A

5.0

100.0

Maximum DC reverse current

at rated DC blocking voltage

T^A=25°C

T^A=100°C

C^J

30.0

20.0

°C/W

°C

Typical junction capacitance (NOTE 1)

R^θJA

T^J,TSTG

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

-65 to +150

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

DN:T19821A0

https://www.microdiode.com

Rev:2019A0

Page :1

中文翻译

下载PDF

与1N5406G相关器件

型号	品牌	获取价格	描述	数据表
1N5406-G	COMCHIP	获取价格	General Purpose Rectifier
1N5406G(LS)	DIODES	获取价格	1.0A GLASS PASSIVATED RECTIFIERS
1N5406G-A	DIODES	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
1N5406G-B	DIODES	获取价格	3.0A GLASS PASSIVATED RECTIFIER
1N5406G-E	GULFSEMI	获取价格	GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A
1N5406GH31	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406GH31-1	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406GH34	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406GH35	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406GH36	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,

与1N5406G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

24
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

16
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

48
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5406G

1N5406G 数据手册

与1N5406G相关器件

与1N5406G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5406G

1N5406G 数据手册

与1N5406G相关器件

与1N5406G相关文章

您还可以找

您在本页遇到什么问题？