5秒后页面跳转
1N5406G PDF预览

1N5406G

更新时间: 2024-11-20 06:19:59
品牌 Logo 应用领域
商升特 - SEMTECH /
页数 文件大小 规格书
2页 204K
描述
GLASS PASSIVATED SILICON RECTIFIERS

1N5406G 数据手册

 浏览型号1N5406G的Datasheet PDF文件第2页 
1N5400G THRU 1N5408G  
GLASS PASSIVATED SILICON RECTIFIERS  
Reverse Voltage - 50 to 1000 V  
Forward Current - 3 A  
Features  
DO-201AD  
• High current capability  
• Glass passivated junction  
• Low forward voltage drop  
• Low reverse leakage  
1.45  
1.15  
DIA.  
Min. 25.4  
5.5  
4.9  
• The plastic package carries UL flammability  
classification 94V-0  
DIA.  
9.2  
8.6  
Mechanical Data  
Min. 25.4  
• Case: Molded plastic, DO-201AD (DO-27)  
• Terminals: Axial leads, solderable per MIL-STD-202,  
Method 208  
Dimensions in mm  
• Polarity: color band denotes cathode end  
• Mounting Position: Any  
Absolute Maximum Ratings and Characteristics  
Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive  
load, derate current by 20%.  
1N5400G 1N5401G 1N5402G 1N5403G 1N5404G 1N5405G 1N5406G 1N5407G 1N5408G  
Parameter  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Symbols  
VRRM  
VRMS  
VDC  
Units  
V
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
800 1000  
560 700  
800 1000  
V
Maximum DC Blocking Voltage  
100  
V
Maximum Average Forward Rectified Current  
0.375" (9.5 mm) Lead Length at TA = 75 OC  
Peak Forward Surge Current, 8.3 ms Single Half-  
Sine-Wave Superimposed on Rated Load at Tj =  
125 OC  
IF(AV)  
3
A
A
IFSM  
200  
1.1  
Maximum Forward Voltage at 3 A DC  
VF  
IR  
V
Maximum Reverse Current  
TA = 25 OC  
10  
µA  
at Rated DC Blocking Voltage  
TA = 100 OC  
100  
Typical Junction Capacitance 1)  
Typical Thermal Resistance 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
CJ  
RθJA  
Tj  
35  
20  
pF  
OC/W  
OC  
- 55 to + 175  
- 55 to + 175  
Tstg  
OC  
1) Measured at 1 MHz and applied reverse voltage of 4 V DC.  
2) Thermal resistance from junction to ambient.  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 04/12/2008  
B

与1N5406G相关器件

型号 品牌 获取价格 描述 数据表
1N5406-G COMCHIP

获取价格

General Purpose Rectifier
1N5406G(LS) DIODES

获取价格

1.0A GLASS PASSIVATED RECTIFIERS
1N5406G-A DIODES

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,
1N5406G-B DIODES

获取价格

3.0A GLASS PASSIVATED RECTIFIER
1N5406G-E GULFSEMI

获取价格

GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50V to 1000V CURRENT: 3.0A
1N5406GH31 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406GH31-1 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406GH34 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406GH35 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,
1N5406GH36 RECTRON

获取价格

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,