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1N5406-E3/51 PDF预览

1N5406-E3/51

更新时间: 2024-11-20 19:57:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 70K
描述
DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

1N5406-E3/51 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.56
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:600 V
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

1N5406-E3/51 数据手册

 浏览型号1N5406-E3/51的Datasheet PDF文件第2页浏览型号1N5406-E3/51的Datasheet PDF文件第3页浏览型号1N5406-E3/51的Datasheet PDF文件第4页 
1N5400 thru 1N5408  
Vishay General Semiconductor  
General Purpose Plastic Rectifier  
FEATURES  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
DO-201AD  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes application.  
PRIMARY CHARACTERISTICS  
Note  
These devices are not AEC-Q101 qualified.  
IF(AV)  
3.0 A  
VRRM  
IFSM  
IR  
50 V to 1000 V  
200 A  
MECHANICAL DATA  
Case: DO-201AD, molded epoxy body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
5.0 μA  
VF  
1.2 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
150 °C  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL 1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 UNIT  
Maximum repetitive peak  
reverse voltage  
VRRM  
50  
100  
200  
300  
400  
500  
600  
800  
1000  
V
Maximum RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
210  
300  
280  
400  
350  
500  
420  
600  
560  
800  
700  
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward  
rectified current 0.5" (12.5 mm)  
lead length at TL = 105 °C  
IF(AV)  
3.0  
A
A
Peak forward surge current  
8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
200  
Maximum full load reverse  
current, full cycle average  
0.5" (12.5 mm) lead length  
at TL = 105 °C  
IR(AV)  
500  
μA  
°C  
Operating junction and  
storage temperature range  
TJ, TSTG  
- 50 to + 150  
Document Number: 88516  
Revision: 04-Nov-09  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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