Datasheet > 1N5406G

1N5406G

更新时间： 2024-11-20 06:17:55

品牌	Logo	应用领域
顺烨 - SHUNYE		/
页数	文件大小	规格书
2页	991K
描述
GLASS PASSIVATED SILICON RECTIFIER

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1N5406G 数据手册

1N5400G THRU 1N5408G

GLASS PASSIVATED SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes

FEATURES

DO-201AD

The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

Construction utilizes void-free

molded plastic technique

1.0 (25.4)

MIN.

Low reverse leakage

High forward surge current capability

High temperature soldering guaranteed:

0.220 (5.6)

0.197(5.0)

DIA.

250 C/10 seconds,0.375”(9.5mm) lead length,

5 lbs. (2.3kg) tension

0.375(9.5)

0.285(7.2)

MECHANICAL DATA

1.0 (25.4)

MIN.

Case: JEDEC DO-201AD molded plastic body

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

0.052 (1.3)

0.048 (1.2)

DIA.

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight:0.04 ounce, 1.10 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

SYMBOLS

UNITS

5408G

5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G

Maximum repetitive peak reverse voltage

Maximum RMS voltage

VOLTS

50 100 200 300 400 500 600 800 1000

35 70 140 210 280 350 420 560 700

V^RRM

V^RMS

V^DC

50 100 200 300 400 500 600 800 1000

Maximum DC blocking voltage

Maximum average forward rectified current

0.375”(9.5mm) lead length at TA=75 C

Peak forward surge current

I^(AV)

3.0

Amps

I^FSM

200

1.2

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Amps

Volts

Maximum instantaneous forward voltage at 3.0A

Maximum DC reverse current

at rated DC blocking voltage

T^A=25 C

5.0

100

TA=100 C

Typical junction capacitance (NOTE 1)

C^J

RθJA

C/W

30.0

20.0

Typical thermal resistance (NOTE 2)

Operating junction and storage temperature range

TJ,TSTG

-65 to +175

Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

www.shunyegroup.com

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1N5406GH36	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,