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1N5404

更新时间： 2024-02-09 14:49:13
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
2页 49K
描述
STANDARD RECOVERY RECTIFIERS 50-1000 VOLTS 3.0 AMPERE

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中文翻译

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1N5404 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：DO-201AD
包装说明：O-PALF-W2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.59
Is Samacsys：N其他特性：HIGH RELIABILITY
应用：GENERAL PURPOSE外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJEDEC-95代码：DO-201AD
JESD-30 代码：O-PALF-W2最大非重复峰值正向电流：200 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：3 A
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
最大重复峰值反向电压：400 V表面贴装：NO
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1N5404 数据手册

 浏览型号1N5404的Datasheet PDF文件第2页 
Order this document  
by 1N5400/D  
SEMICONDUCTOR TECHNICAL DATA  
Lead mounted standard recovery rectifiers are designed for use in power supplies  
and other applications having need of a device with the following features:  
1N5404 and 1N5406 are  
•
•
•
•
•
High Current to Small Size  
High Surge Current Capability  
Low Forward Voltage Drop  
Void–Free Economical Plastic Package  
Available in Volume Quantities  
Motorola Preferred Devices  
STANDARD  
RECOVERY RECTIFIERS  
50–1000 VOLTS  
Mechanical Characteristics  
3.0 AMPERE  
•
•
•
Case: Epoxy, Molded  
Weight: 1.1 gram (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are  
Readily Solderable  
•
Lead and Mounting Surface Temperature for Soldering Purposes:  
220°C Max. for 10 Seconds, 1/16″ from case  
•
•
Shipped in plastic bags, 5,000 per bag.  
Available Tape and Reeled, 1500 per reel, by adding a “RL” suffix to the  
part number  
•
•
Polarity: Cathode Indicated by Polarity Band  
Marking: 1N5400, 1N5401, 1N5402, 1N5404, 1N5406, 1N5407, 1N5408  
CASE 267–03  
MAXIMUM RATINGS  
Rating  
Symbol 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
50  
100  
200  
400  
600  
800  
1000  
Volts  
RRM  
RWM  
R
V
Non–repetitive Peak Reverse Voltage  
V
100  
200  
300  
525  
3.0  
800  
1000  
1200  
Volts  
Amp  
RSM  
Average Rectified Forward Current  
(Single Phase Resistive Load,  
I
O
1/2″ Leads, T = 105°C)  
L
Non–repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions)  
I
200 (one cycle)  
Amp  
FSM  
Operating and Storage Junction  
Temperature Range  
T
T
stg  
– 65 to +170  
– 65 to +175  
°C  
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Typ  
Unit  
Thermal Resistance, Junction to Ambient (PC Board Mount, 1/2″ Leads)  
ELECTRICAL CHARACTERISTICS  
Characteristic  
R
53  
°C/W  
θJA  
Symbol  
Min  
Typ  
Max  
Unit  
*Instantaneous Forward Voltage (1)  
(i = 9.4 Amp)  
F
v
—
—
1.2  
Volts  
F
Average Reverse Current (1)  
DC Reverse Current (Rated dc Voltage, T = 80°C)  
I
—
—
—
—
500  
500  
µA  
R(AV)  
R
I
L
* JEDEC Registered Data.  
(1) Measured in a single phase halfwave circuit such as shown in Figure 6.25 of EIA RS–282, November 1963. Operated at rated load conditions  
= 80°C, I = 3.0 A, V = V  
T
L
.
RWM  
O
r
Preferred devices are Motorola recommended choices for future use and best overall value.  
Ratings at 25°C ambient temperature unless otherwise specified.  
60 Hz resistive or inductive loads.  
For capacitive load, derate current by 20%.  
Rev 2  
Motorola, Inc. 1996  
12

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1N5404/100 VISHAY

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1N5404/100-E3 VISHAY

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 		DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5404/4F VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5404/4F-E3 VISHAY

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 		DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5404/4G-E3 VISHAY

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 		DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5404/54 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5404/54-E3 VISHAY

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 		DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5404/56-E3 VISHAY

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 		DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5404/58 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

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