5秒后页面跳转
1N5404/60-E3 PDF预览

1N5404/60-E3

更新时间: 2024-01-18 03:35:13
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 330K
描述
DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

1N5404/60-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.59
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值正向电流:200 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-50 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:400 V
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

1N5404/60-E3 数据手册

 浏览型号1N5404/60-E3的Datasheet PDF文件第2页浏览型号1N5404/60-E3的Datasheet PDF文件第3页浏览型号1N5404/60-E3的Datasheet PDF文件第4页 
1N5400 thru 1N5408  
Vishay General Semiconductor  
General Purpose Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
3.0 A  
50 V to 1000 V  
200 A  
5.0 µA  
VF  
1.2 V  
Tj max.  
150 °C  
DO-201AD  
Features  
Mechanical Data  
• Low forward voltage drop  
Case: DO-201AD, molded epoxy body  
• Low leakage current  
Epoxy meets UL-94V-0 Flammability rating  
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Terminals: Matte tin plated (E3 Suffix) leads,  
solderable per J-STD-002B and JESD22-B102D  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application.  
(Note: Theses devices are not Q101 qualified. There-  
fore, the devices specified in this datasheet have not  
been designed for use in automotive or Hi-Rel appli-  
cations.)  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol 1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 Unit  
Maximum repetitive peak  
reverse voltage  
V
50  
100  
200  
300  
400  
500  
600  
800  
1000  
V
RRM  
Maximum RMS voltage  
V
35  
50  
70  
140  
200  
210  
300  
280  
400  
3.0  
350  
500  
420  
600  
560  
800  
700  
V
V
A
RMS  
Maximum DC blocking voltage  
V
100  
1000  
DC  
Maximum average forward  
I
F(AV)  
rectified current 0.5" (12.5 mm)  
lead length at T = 105 °C  
L
Peak forward surge current  
8.3 ms single half sine-wave  
superimposed on rated load  
I
200  
500  
A
FSM  
Maximum full load reverse  
current, full cycle average 0.5"  
(12.5 mm) lead length at  
I
µA  
R(AV)  
T = 105 °C  
L
Operating junction and storage T ,T  
J
- 50 to + 150  
°C  
STG  
temperature range  
Document Number 88516  
25-Aug-05  
www.vishay.com  
1

与1N5404/60-E3相关器件

型号 品牌 描述 获取价格 数据表
1N5404/62 VISHAY Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

获取价格

1N5404/62-E3 VISHAY DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

获取价格

1N5404/68-E3 VISHAY DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

获取价格

1N5404/70 VISHAY Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

获取价格

1N5404/70-E3 VISHAY DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

获取价格

1N5404/71 VISHAY Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

获取价格