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1N5404(G) PDF预览

1N5404(G)

更新时间： 2024-11-23 13:02:27
品牌 Logo 应用领域
鲁光 - LGE 整流二极管普通整流二极管
页数 文件大小 规格书
2页 177K
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中文翻译

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1N5404(G) 技术参数

Case Style：DO-27IF（A）：3.0
Maximum recurrent peak reverse voltage：400Peak forward surge current：150
Maximum instantaneous forward voltage：1.0@IVA(A)：3.0
Maximum reverse current：10.0TRR(nS)：/
class：Diodes

1N5404(G) 数据手册

 浏览型号1N5404(G)的Datasheet PDF文件第2页 
1N5400-1N5408  
3.0 AMP. Silicon Rectifiers  
DO-201AD  
Features  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
High efficiency, Low VF  
High current capability  
High reliability  
High surge current capability  
Low power loss  
Mechanical Data  
ꢀ
ꢀ
ꢀ
ꢀ
Cases: Molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Polarity: Color band denotes cathode  
High temperature soldering guaranteed:  
o
260 C/10 seconds/.375”,(9.5mm) lead  
lengths at 5 lbs., (2.3kg) tension  
Weight: 1.2 grams  
Dimensions in inches and (millimeters)  
ꢀ
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Symbol  
Type Number  
Units  
5400 5401 5402 5404 5406 5407 5408  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800 1000  
560 700  
V
V
V
Maximum DC Blocking Voltage  
100  
800 1000  
Maximum Average Forward Rectified  
Current .375 (9.5mm) Lead Length  
I(AV)  
3.0  
A
A
o
@TA = 75 C  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated Load IFSM  
200  
(JEDEC method )  
2
2
Rating for Fusing (t<8.3ms)  
I t  
166  
1.0  
A s  
Maximum Instantaneous Forward Voltage  
@ 3.0A  
VF  
V
o
5.0  
uA  
uA  
Maximum DC Reverse Current @ TA=25 C  
IR  
o
at Rated DC Blocking Voltage @ TA=125 C  
100  
Maximum Full Load Reverse Current, Full  
Cycle Average .375”(9.5mm) Lead Length  
HT  
30  
uA  
IR  
o
@TL=75 C  
Typical Junction Capacitance ( Note 1 )  
Typical Thermal Resistance ( Note 2 )  
Operating Temperature Range  
Cj  
50  
40  
pF  
o
R
C/W  
θJA  
o
TJ  
-65 to +150  
-65 to +150  
C
o
Storage Temperature Range  
TSTG  
C
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
2. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.  
Notes:  
http://www.luguang.cn  
mail:lge@luguang.cn  
12

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与1N5404(G)相关器件

型号 品牌 获取价格 描述 数据表
1N5404/100 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5404/100-E3 VISHAY

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 		DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5404/4F VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5404/4F-E3 VISHAY

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 		DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5404/4G-E3 VISHAY

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 		DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5404/54 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5404/54-E3 VISHAY

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 		DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5404/56-E3 VISHAY

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 		DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode
1N5404/58 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
1N5404/60-E3 VISHAY

获取价格

 		DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

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